STGW50HF60SD STMicroelectronics, STGW50HF60SD Datasheet - Page 4

• Manufacturer Part Number: STGW50HF60SD
• Description: IGBT 600V 60A TO-247
• Manufacturer: STMicroelectronics

Specifications of STGW50HF60SD

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.45V @ 15V, 30A
• Current - Collector (ic) (max): 110A
• Power - Max: 284W
• Input Type: Standard
• Mounting Type: *
• Package / Case: *
• Transistor Type: IGBT
• Dc Collector Current: 110A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 284W
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: TO-247
• No. Of: RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Supplier Unconfirmed
• Other names: 497-11089-5

Electrical characteristics
4/13
Table 6.
Table 7.
1.
2. Turn-off losses include also the tail of the collector current.
Table 8.
Symbol
Symbol
(di/dt)
(di/dt)
Symbol
Eon
Eon
t
t
E
E
t
t
t
t
r
r
in a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs and diode are at
the same temperature (25°C and 125°C).
d
d
d(on)
d(on)
(V
(V
Eon is the turn-on losses when a typical diode is used in the test circuit in
off
off
E
E
I
I
(
(
Q
Q
t
t
V
t
t
rrm
rrm
t
t
off
off
r
r
f
f
off
off
ts
ts
rr
rr
F
rr
rr
(2)
(2)
(1)
(1)
on
on
)
)
)
)
Turn-on delay time
Current rise time
Turn-on current slope
Turn-on delay time
Current rise time
Turn-on current slope
Off voltage rise time
Turn-off delay time
Current fall time
Off voltage rise time
Turn-off delay time
Current fall time
Turn-on switching losses
Turn-off switching losses
Total switching losses
Turn-on switching losses
Turn-off switching losses
Total switching losses
Forward on-voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching on/off (inductive load)
Switching energy (inductive load)
Collector-emitter diode
Parameter
Parameter
Parameter
Doc ID 16818 Rev 2
V
R
(see Figure 15)
V
R
T
V
R
(see Figure 15)
V
R
T
V
R
(see Figure 15)
V
R
T
I
I
I
di/dt = 100 A/µs
(see Figure 18)
I
T
di/dt = 100 A/µs
(see Figure 18)
F
F
F
F
CC
CC
J
G
G
CC
CC
CC
CC
G
G
J
G
G
J
J
= 10 Ω , V
= 10 Ω , V
= 125 °C
= 30 A
= 30 A,
= 30 A, V
= 30 A, V
= 10 Ω , V
= 10 Ω , V
= 10 Ω , V
= 10 Ω , V
= 125 °C
= 125 °C
= 125 °C,
= 400 V, I
= 400 V, I
= 400 V, I
= 400 V, I
= 400 V, I
= 400 V, I
Test conditions
Test conditions
Test conditions
T
GE
GE
GE
GE
GE
GE
J
R
R
(see Figure 15)
(see Figure 15)
(see Figure 15)
= 125 °C
C
C
C
C
C
C
= 50 V,
= 50 V,
= 15 V,
= 15 V,
= 15 V,
= 15 V,
= 15 V,
= 15 V,
= 30 A
= 30 A
= 30 A
= 30 A
= 30 A
= 30 A
Figure
Min.
Min.
Min.
-
-
-
-
-
-
-
-
-
15. If the IGBT is offered
1280
1100
Typ.
Typ.
Typ.
370
220
465
700
250
800
0.25
4.45
0.45
8.25
140
103
390
2.8
1.8
STGW50HF60SD
4.2
7.8
50
20
47
22
67
4
7
Max.
Max.
Max.
-
-
-
-
-
-
-
-
-
A/µs
A/µs
Unit
Unit
Unit
nC
nC
ns
ns
mJ
mJ
mJ
mJ
mJ
mJ
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
V
V
A
A