STGW50HF60S STMicroelectronics, STGW50HF60S Datasheet
STGW50HF60S
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STGW50HF60S Summary of contents
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... Applications ■ PV inverter ■ UPS Description STGW50HF60S is a very low drop IGBT based on new advanced planar technology, showing extremely low on-state voltage and limited turn-off losses. The overall performance makes this IGBT ideal in low frequency switches of mixed frequency topologies for PF ≤ 1. ...
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... Parameter = ° 100 ° ° max ------------------------------------------------------------------------------------------------------- C C × max ( thj c – CE sat =10 Ω =150 °C, R =15 V CES Parameter Doc ID 16989 Rev 2 STGW50HF60S Value 600 110 60 60 130 ±20 284 - 55 to 150 – max C C Value 0.44 50 Unit °C Unit ° ...
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... STGW50HF60S 2 Electrical characteristics °C unless otherwise specified. J Table 4. Static Symbol Collector-emitter breakdown voltage V (BR)CES ( Collector-emitter saturation V CE(sat) voltage V Gate threshold voltage GE(th) Collector cut-off current I CES ( Gate-emitter leakage I GES current (V g Forward transconductance fs Table 5. Dynamic Symbol Input capacitance C ies Output capacitance ...
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... 400 Ω (see Figure V = 400 Ω 125 °C J Parameter Test conditions V = 400 Ω (see Figure V = 400 Ω 125 °C J Doc ID 16989 Rev 2 STGW50HF60S Min. Typ 14) 1280 = (see Figure 14) 1100 = 30 A 370 220 GE 14) 465 = 30 A 700 250 GE (see Figure 14) 800 Min ...
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... STGW50HF60S 2.1 Electrical characteristics (curves) Figure 2. Output characteristics I ( =15V GE 120 100 Figure 4. Collector-emitter on voltage vs. temperature V CE(sat) (V) 1.5 1.4 V =15V GE 1.3 1.2 1.1 1.0 0.9 0 -50 Figure 6. Breakdown voltage vs. temperature Figure 7. V (BR)CES ( 1.10 1.05 1.00 0.95 0.90 - Figure 3. AM0922v1 I ( =11V GE 120 ...
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... AM08883v1 E =400V, R =10Ω G =15V, T =125°C J 1000 (A) C Figure 13. AM08885v1 I C (A) 10 =30A C =10Ω 0.1 0.01 100 T (°C) 0.1 J Doc ID 16989 Rev 2 STGW50HF60S Capacitance variations C f=1MHz 0.1 1 100 10 resistance (µJ) E off V =400V, I =30A =15V, T =125° 100 Turn-off SOA R =10Ω ...
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... STGW50HF60S 3 Test circuits Figure 14. Test circuit for inductive load switching Figure 16. Switching waveform Td(off) Td(on) Tr(Ion) Ton Figure 15. Gate charge test circuit AM01504v1 90% 10% 90% 10% Tr(Voff) Tcross 90% 10% Tf Toff AM01506v1 Doc ID 16989 Rev 2 Test circuits AM01505v1 7/11 ...
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... TO-247 mechanical data Dim ∅P ∅R S 8/11 mm Min. Typ. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 Doc ID 16989 Rev 2 STGW50HF60S ® Max. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 14.80 4.30 3.65 5.50 ...
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... STGW50HF60S Figure 17. TO-247 drawing Doc ID 16989 Rev 2 Package mechanical data 0075325_F 9/11 ...
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... Revision history 5 Revision history Table 9. Document revision history Date 18-Jan-2010 21-Jan-2011 10/11 Revision 1 Initial release. 2 Document status promoted from preliminary data to datasheet. Doc ID 16989 Rev 2 STGW50HF60S Changes ...
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... STGW50HF60S Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...