IPW60R041C6 Infineon Technologies, IPW60R041C6 Datasheet

MOSFET N-CH 600V 77.5A TO 247-3

IPW60R041C6

Manufacturer Part Number
IPW60R041C6
Description
MOSFET N-CH 600V 77.5A TO 247-3
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheet

Specifications of IPW60R041C6

Input Capacitance (ciss) @ Vds
6530pF @ 10V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
41 mOhm @ 44.4A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
77.5A
Vgs(th) (max) @ Id
3.5V @ 2.96mA
Gate Charge (qg) @ Vgs
290nC @ 10V
Power - Max
481W
Mounting Type
*
Package / Case
TO-247-3
Transistor Polarity
N Channel
Drain Source Voltage Vds
600V
On Resistance Rds(on)
0.037ohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
30V
Operating Temperature Range
-55°C To +150°C
Transistor
RoHS Compliant
Transistor Case Style
TO-247
Rohs Compliant
Yes
Resistance Drain-source Rds (on)
0.037 Ohms
Drain-source Breakdown Voltage
650 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
77.5 A
Power Dissipation
481 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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... Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system ...

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