BSC011N03LS Infineon Technologies, BSC011N03LS Datasheet - Page 5

• Manufacturer Part Number: BSC011N03LS
• Description: MOSFET N-CH 30V 100A 8TDSON
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSC011N03LS

• Input Capacitance (ciss) @ Vds: 4700pF @ 15V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.1 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.2V @ 250µA
• Gate Charge (qg) @ Vgs: 72nC @ 10V
• Power - Max: 96W
• Mounting Type: Surface Mount
• Package / Case: 8-PowerTDFN
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.9 mOhms
• Forward Transconductance Gfs (max / Min): 170 S, 85 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSC011N03LSTR

Table 6
Parameter
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total
Gate charge total, sync. FET
Output charge
1) See figure 16 for gate charge parameter definition
Table 7
Parameter
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery charge
Preliminary Data Sheet
Gate charge characteristics
Reverse diode characteristics
Symbol
Q
Q
Q
Q
Q
V
Q
Q
Q
Symbol
I
I
V
Q
s
S,pulse
plateau
SD
g(th)
sw
g(sync)
oss
gs
gd
g
g
rr
1)
Min.
-
-
-
-
-
-
-
-
-
Min.
-
-
-
-
4
Typ.
11
7.5
10.3
14
36
2.4
72
29
40
Typ.
-
-
0.8
20
Values
Values
Max.
-
-
-
-
-
-
-
-
-
Max.
96
384
1
-
OptiMOS™ Power-MOSFET
Unit
nC
V
nC
Unit
A
V
nC
Electrical characteristics
Note /
Test Condition
V
I
V
V
I
V
V
V
V
Note /
Test Condition
T
V
T
V
d
D
D
I
C
j
DD
GS
DD
GS
DS
GS
DD
GS
R
=30 A,
=30 A,
=25 °C
F
=25 °C
=15 V,
/d
BSC011N03LS
=0.1 V,
=15 V,
=0 to 4.5 V
=15 V,
=0 to 10V
=0 to 4.5 V
=15 V,
=0 V,
t
=400 A/µs
2.0, 2011-03-01
I
I
F
F
V
=30 A,
=I
GS
s
,
=0 V