BSC0901NS Infineon Technologies, BSC0901NS Datasheet - Page 4

• Manufacturer Part Number: BSC0901NS
• Description: MOSFET N-CH 30V 100A 8TDSON
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSC0901NS

• Input Capacitance (ciss) @ Vds: 2800pF @ 15V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.9 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.2V @ 250µA
• Gate Charge (qg) @ Vgs: 44nC @ 10V
• Power - Max: 69W
• Mounting Type: Surface Mount
• Package / Case: 8-PowerTDFN
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.6 mOhms
• Forward Transconductance Gfs (max / Min): 140 S, 70 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSC0901NSTR

4
Electrical characteristics, at
Table 4
Parameter
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
Table 5
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Final Data Sheet
Electrical characteristics
Static characteristics
Dynamic characteristics
T
j=25 °C, unless otherwise specified.
Symbol
V
V
I
I
R
R
g
DSS
GSS
fs
(BR)DSS
GS(th)
DS(on)
G
Symbol
C
C
C
t
t
t
t
d(on)
r
d(off)
f
rss
iss
oss
Min.
30
1
-
-
-
-
-
-
70
Min.
-
-
-
-
-
-
-
3
Typ.
-
-
0.1
10
10
1.9
1.6
0.8
140
Values
Typ.
2800
960
140
5.4
6.8
28
4.8
Values
Max.
-
2.2
1
100
100
2.4
1.9
-
-
Max.
-
-
-
-
-
-
-
OptiMOS™ Power-MOSFET
Unit
V
µA
nA
mΩ
Ω
S
Unit
pF
ns
Note / Test Condition
V
V
V
T
V
T
V
V
V
|V
I
Electrical characteristics
D
j
j
GS
DS
DS
DS
GS
GS
GS
=30 A
=25 °C
=125 °C
DS
=
=30 V,
=30 V,
=0 V,
=20 V,
=4.5 V,
=10 V,
|>2|I
Note /
Test Condition
V
f
V
I
V
=1 MHz
D
GS
DD
=30 A,
GS
=0 V,
=15 V,
D
,
|
I
I
RDS(on)max
D
2.0, 2011-03-01
D
V
V
V
I
BSC0901NS
=1.0 mA
I
D
=250 µA
D
GS
GS
DS
=30 A,
=30 A,
R
V
=0 V,
=0 V,
=0 V
G
V
DS
= 1.6 Ω
GS
=15 V,
,
=10 V,