BSZ12DN20NS3G Infineon Technologies

BSZ12DN20NS3G

Manufacturer Part Number

BSZ12DN20NS3G

Description

MOSFET N-CH 200V 11.3A 8TDSON

Manufacturer

Infineon Technologies

Series

OptiMOS™r

Specifications of BSZ12DN20NS3G

Input Capacitance (ciss) @ Vds

680pF @ 100V

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

125 mOhm @ 5.7A, 10V

Drain To Source Voltage (vdss)

200V

Current - Continuous Drain (id) @ 25° C

11.3A

Vgs(th) (max) @ Id

4V @ 25µA

Gate Charge (qg) @ Vgs

8.7nC @ 10V

Power - Max

50W

Mounting Type

Surface Mount

Package / Case

8-PowerTDFN

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

108 mOhms

Forward Transconductance Gfs (max / Min)

12 S, 6 S

Drain-source Breakdown Voltage

200 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

11.3 A

Power Dissipation

50 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

BSZ12DN20NS3GTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

BSZ12DN20NS3G

Manufacturer:

INFINEON/英飞凌

Quantity:

20 000

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