BSZ22DN20NS3G Infineon Technologies
![MOSFET N-CH 200V 7A 8TDSON](/photos/16/8/160865/tdson8_sml.jpg)
BSZ22DN20NS3G
Manufacturer Part Number
BSZ22DN20NS3G
Description
MOSFET N-CH 200V 7A 8TDSON
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Specifications of BSZ22DN20NS3G
Input Capacitance (ciss) @ Vds
430pF @ 100V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
225 mOhm @ 3.5A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
7A
Vgs(th) (max) @ Id
4V @ 13µA
Gate Charge (qg) @ Vgs
5.6nC @ 10V
Power - Max
34W
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
194 mOhms
Forward Transconductance Gfs (max / Min)
7 S, 3.5 S
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
7 A
Power Dissipation
34 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BSZ22DN20NS3GTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSZ22DN20NS3G
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000