IPD60R1K4C6 Infineon Technologies, IPD60R1K4C6 Datasheet - Page 6
![MOSFET N-CH 600V 3.2A TO252-3](/photos/16/8/160885/to252_sml.jpg)
IPD60R1K4C6
Manufacturer Part Number
IPD60R1K4C6
Description
MOSFET N-CH 600V 3.2A TO252-3
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheet
1.IPD60R1K4C6.pdf
(14 pages)
Specifications of IPD60R1K4C6
Input Capacitance (ciss) @ Vds
200pF @ 100V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.4 Ohm @ 1.1A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
3.2A
Vgs(th) (max) @ Id
3.5V @ 90µA
Gate Charge (qg) @ Vgs
9.4nC @ 10V
Power - Max
28.4W
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.26 Ohms
Drain-source Breakdown Voltage
650 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
3.2 A
Power Dissipation
28.4 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Packages
PG-TO252-3
Vds (max)
600.0 V
Package
DPAK (TO-252)
Rds(on) @ Tj=25°c Vgs=10
1,400.0 mOhm
Id(max) @ Tc=25°c
3.2 A
Idpuls (max)
8.0 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IPD60R1K4C6TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IPD60R1K4C6
Manufacturer:
INFINEON
Quantity:
15 000
Company:
Part Number:
IPD60R1K4C6
Manufacturer:
INFINEON
Quantity:
30 000