IPD60R3K3C6 Infineon Technologies, IPD60R3K3C6 Datasheet - Page 7

• Manufacturer Part Number: IPD60R3K3C6
• Description: MOSFET N-CH 600V 1.7A TO252-3
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of IPD60R3K3C6

• Input Capacitance (ciss) @ Vds: 93pF @ 100V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.3 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 1.7A
• Vgs(th) (max) @ Id: 3.5V @ 40µA
• Gate Charge (qg) @ Vgs: 4.6nC @ 10V
• Power - Max: 18.1W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.97 Ohms
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 1.7 A
• Power Dissipation: 18.1 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Packages: PG-TO252-3
• Vds (max): 600.0 V
• Package: DPAK (TO-252)
• Rds(on) @ Tj=25°c Vgs=10: 3,300.0 mOhm
• Id(max) @ Tc=25°c: 1.7 A
• Idpuls (max): 4.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPD60R3K3C6TR