AUIRF7739L2TR International Rectifier, AUIRF7739L2TR Datasheet - Page 2

• Manufacturer Part Number: AUIRF7739L2TR
• Description: MOSFET N-CH 40V 375A DIRECTFET2
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRF7739L2TR

• Input Capacitance (ciss) @ Vds: 11880pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1 mOhm @ 160A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 375A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 330nC @ 10V
• Power - Max: 3.8W
• Mounting Type: *
• Package / Case: *
• Configuration: Single Quad Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 46 A
• Power Dissipation: 3.8 W
• Gate Charge Qg: 220 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ƒ Surface mounted on 1 in. square Cu
Notes  through Š are on page 10
V
∆V
R
V
∆V
gfs
R
I
I
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
I
I
V
t
Q
Static Characteristics @ T
Dynamic Characteristics @ T
Diode Characteristics @ T
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
(BR)DSS
GS(th)
SD
(still air).
DS(on)
G
iss
oss
rss
oss
oss
oss
g
sw
oss
rr
Q
Q
Q
Q
(BR)DSS
GS(th)
2
gs1
gs2
godr
gd
eff.
/∆T
/∆T
J
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Forward Transconductance
Gate Resistance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Gate Charge Overdrive
Switch Charge (Q
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
g
Parameter
Parameter
gs2
J
J
= 25°C (unless otherwise stated)
= 25°C (unless otherwise stated)
+ Q
J
gd
= 25°C (unless otherwise stated)
)
‰
clip heatsink (still air)
Min.
Min.
Min.
–––
–––
–––
280
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.0
40
11880
0.008
Typ.
Typ.
2510
1240
8610
2230
3040
Typ.
–––
700
-6.7
–––
–––
–––
–––
–––
220
100
–––
–––
–––
250
with small
2.8
1.5
46
19
81
74
83
21
71
56
42
87
Max. Units
Max. Units
1000
Max.
1070
-100
–––
–––
–––
–––
–––
110
380
–––
–––
–––
250
100
330
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
130
4.0
5.0
1.3
mV/°C
Units
V/°C
µΩ
µA
nA
nC
nC
nC
board with metalized back and with small
clip heatsink (still air)
pF
ns
ns
V
V
S
Ω
A
V
‰ Mounted on minimum footprint full size
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
See Fig. 11
V
V
I
R
V
V
ƒ = 1.0MHz
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
di/dt = 100A/µs
D
D
I
I
S
F
GS
GS
DS
DS
DS
DS
GS
GS
DS
DS
DD
G
GS
DS
GS
GS
GS
= 160A
= 160A
= 160A, V
= 160A, V
= 1.8Ω
= V
= 10V, I
= 40V, V
= 40V, V
= 20V, V
= 16V, V
= 20V, V
= 25V
= 0V, I
= 10V, I
= 20V
= -20V
= 0V
= 0V, V
= 0V, V
= 0V, V
GS
, I
D
D
DS
DS
DS
D
D
= 250µA
GS
DD
GS
GS
GS
GS
GS
Conditions
= 250µA
Conditions
= 160A
= 160A
Conditions
= 1.0V, f=1.0MHz
= 32V, f=1.0MHz
= 0V to 32V
= 20V
= 0V
= 0V
= 0V, T
= 10V
= 0V
= 10V
i
D
i
i
= 1mA
J
i
www.irf.com
= 125°C