AUIRF7739L2TR International Rectifier, AUIRF7739L2TR Datasheet - Page 10

• Manufacturer Part Number: AUIRF7739L2TR
• Description: MOSFET N-CH 40V 375A DIRECTFET2
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRF7739L2TR

• Input Capacitance (ciss) @ Vds: 11880pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1 mOhm @ 160A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 375A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 330nC @ 10V
• Power - Max: 3.8W
• Mounting Type: *
• Package / Case: *
• Configuration: Single Quad Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 46 A
• Power Dissipation: 3.8 W
• Gate Charge Qg: 220 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Automotive DirectFET
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
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10
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET
Surface mounted on 1 in. square Cu board, steady state.
T
Repetitive rating; pulse width limited by max. junction temperature.
C
measured with thermocouple mounted to top (Drain) of part.
®
Tape & Reel Dimension (Showing component orientation).
®
Website.
†
‡
ˆ
‰
Š
back and with small clip heatsink.
Starting T
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Used double sided cooling, mounting pad with large heatsink.
Mounted on minimum footprint full size board with metalized
R
θ
is measured at T
J
= 25°C, L = 0.021mH, R
J
of approximately 90°C.
G
= 25Ω, I
AS
= 160A.
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