AUIRFB3207 International Rectifier, AUIRFB3207 Datasheet - Page 5

• Manufacturer Part Number: AUIRFB3207
• Description: MOSFET N-CH 75V 75A TO220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRFB3207

• Input Capacitance (ciss) @ Vds: 7600pF @ 50V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.5 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 260nC @ 10V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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1000.0
200
150
100
100.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
50
10.0
0
1.0
0.1
Fig 11. Typical C
20
25
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
Fig 7. Typical Source-Drain Diode
Fig 9. Maximum Drain Current vs.
T J = 175°C
50
30
V DS, Drain-to-Source Voltage (V)
V SD , Source-to-Drain Voltage (V)
T C , Case Temperature (°C)
Case Temperature
Forward Voltage
75
40
T J = 25°C
OSS
100
50
Limited By Package
Stored Energy
125
60
V GS = 0V
150
70
175
80
Fig 12. Maximum Avalanche Energy Vs. DrainCurrent
10000
1000
4000
3000
2000
1000
100
100
0.1
10
90
80
70
1
0
Fig 10. Drain-to-Source Breakdown Voltage
Fig 8. Maximum Safe Operating Area
-60 -40 -20 0
25
1
Tc = 25°C
Tj = 175°C
Single Pulse
Starting T J , Junction Temperature (°C)
V DS , Drain-toSource Voltage (V)
50
T J , Junction Temperature (°C)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10
20 40 60 80 100 120 140 160 180
75
100
TOP
BOTTOM
100
100µsec
1msec
10msec
DC
125
16A
12A
75A
I D
150
1000
175
5