AUIRFB3207 International Rectifier, AUIRFB3207 Datasheet - Page 5
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AUIRFB3207
Manufacturer Part Number
AUIRFB3207
Description
MOSFET N-CH 75V 75A TO220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.AUIRFB3207.pdf
(11 pages)
Specifications of AUIRFB3207
Input Capacitance (ciss) @ Vds
7600pF @ 50V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4.5 mOhm @ 75A, 10V
Drain To Source Voltage (vdss)
75V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
260nC @ 10V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-220-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
AUIRFB3207
Manufacturer:
IR
Quantity:
12 500
www.irf.com
1000.0
200
150
100
100.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
50
10.0
0
1.0
0.1
Fig 11. Typical C
20
25
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
Fig 7. Typical Source-Drain Diode
Fig 9. Maximum Drain Current vs.
T J = 175°C
50
30
V DS, Drain-to-Source Voltage (V)
V SD , Source-to-Drain Voltage (V)
T C , Case Temperature (°C)
Case Temperature
Forward Voltage
75
40
T J = 25°C
OSS
100
50
Limited By Package
Stored Energy
125
60
V GS = 0V
150
70
175
80
Fig 12. Maximum Avalanche Energy Vs. DrainCurrent
10000
1000
4000
3000
2000
1000
100
100
0.1
10
90
80
70
1
0
Fig 10. Drain-to-Source Breakdown Voltage
Fig 8. Maximum Safe Operating Area
-60 -40 -20 0
25
1
Tc = 25°C
Tj = 175°C
Single Pulse
Starting T J , Junction Temperature (°C)
V DS , Drain-toSource Voltage (V)
50
T J , Junction Temperature (°C)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10
20 40 60 80 100 120 140 160 180
75
100
TOP
BOTTOM
100
100µsec
1msec
10msec
DC
125
16A
12A
75A
I D
150
1000
175
5