AUIRFB3207 International Rectifier, AUIRFB3207 Datasheet

AUIRFB3207

Manufacturer Part Number

AUIRFB3207

Description

MOSFET N-CH 75V 75A TO220AB

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.AUIRFB3207.pdf (11 pages)

Specifications of AUIRFB3207

Input Capacitance (ciss) @ Vds

7600pF @ 50V

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

4.5 mOhm @ 75A, 10V

Drain To Source Voltage (vdss)

75V

Current - Continuous Drain (id) @ 25° C

75A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

260nC @ 10V

Power - Max

300W

Mounting Type

Through Hole

Package / Case

TO-220-3

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

AUIRFB3207

Manufacturer:

Quantity:

12 500

Current page: 1 of 11
Download datasheet (283Kb)

Features

Description

Specifically designed for Automotive applications, this HEXFET

Power MOSFET utilizes the latest processing techniques to achieve

extremely low on-resistance per silicon area. Additional features of

this design

switching speed and improved repetitive avalanche rating . These

features combine to make this design an extremely efficient and

reliable device for use in Automotive applications and a wide variety

of other applications.

Absolute Maximum Ratings

implied.

www.irf.com

HEXFET

*Qualification standards can be found at http://www.irf.com/

dV/dt

Thermal Resistance

STG

@ T

Advanced Process Technology

Ultra Low On-Resistance

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free, RoHS Compliant

Automotive Qualified *

= 25°C

= 100°C

= 25°C

is a registered trademark of International Rectifier.

functional operation of the device at these or any other condition beyond those indicated in the specifications is not

are a 175°C junction operating temperature, fast

Continuous Drain Current, V

Continuous Drain Current, VGS @ 10V (Silicon Limited)

Continuous Drain Current, V

Pulsed Drain Current

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy (Thermally limited)

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

Mounting torque, 6-32 or M3 screw

Junction-to-Case

Case-to-Sink, Flat Greased Surface , TO-220

Junction-to-Ambient, TO-220

Parameter

AUTOMOTIVE GRADE

@ 10V (Silicon Limited)

@ 10V (Package Limited)

Gate

See Fig. 14, 15, 16a, 16b,

Typ.

0.50

–––

10lb

AUIRFB3207

-55 to + 175

TO-220AB

D (Silicon Limited)

D (Package Limited)

(BR)DSS

in (1.1N

DS(on)

Max.

170

120

HEXFET Power MOSFET

720

300

± 20

910

300

2.0

5.8

AUIRFB3207

Drain

™

typ.

max.

Max.

0.50

–––

Source

170A

3.6m

4.5m

75A

75V

Units

W/°C

°C/W

V/ns

°C

07/21/10

Related parts for AUIRFB3207

AUIRFB3207 Summary of contents

Page 1

... GS e Ã f Parameter j AUIRFB3207 HEXFET Power MOSFET V D (BR)DSS R typ. DS(on) max (Silicon Limited (Package Limited TO-220AB AUIRFB3207 Gate Drain Source Max. ™ 170 ™ 120 75 720 300 2.0 ± 20 910 See Fig. 14, 15, 16a, 16b, 5.8 - 175 300 x x 10lb in (1 ...

Page 2

Static Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance R Gate Input Resistance G I Drain-to-Source ...

Page 3

Qualification Information Qualification Level Moisture Sensitivity Level Machine Model Human Body Model ESD Charged Device Model RoHS Compliant www.irf.com † Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension of the higher ...

Page 4

VGS TOP 15V 10V 8.0V 6.0V 5.5V 5.0V 100 4.8V BOTTOM 4.5V 10 4.5V 60µs PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 175°C ...

Page 5

175°C 100.0 10 25°C 1.0 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 200 Limited By ...

Page 6

D = 0.50 0.1 0.20 0.10 0.05 0.01 0.02 0.01 0.001 SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 100 Duty Cycle = Single Pulse 10 Allowed avalanche Current vs avalanche ...

Page 7

Temperature ( °C ) Fig 16. Threshold Voltage Vs. Temperature 100 200 300 400 500 ...

Page 8

D.U.T + ƒ ‚ - Fig 21 D.U 20V Fig 22a. Unclamped Inductive Test Circuit Pulse Width < 1µs ...

Page 9

www.irf.com 9 ...

Page 10

... Ordering Information Base part Package Type AUIRFB3207 TO-220 10 Standard Pack Complete Part Number Form Quantity Tube 50 AUIRFB3207 www.irf.com ...

Page 11

... Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR’ ...

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