AUIRF4905 International Rectifier, AUIRF4905 Datasheet - Page 2
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AUIRF4905
Manufacturer Part Number
AUIRF4905
Description
MOSFET P-CH 55V 74A TO220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.AUIRF4905.pdf
(11 pages)
Specifications of AUIRF4905
Input Capacitance (ciss) @ Vds
3400pF @ 25V
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
20 mOhm @ 38A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
74A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
180nC @ 10V
Power - Max
200W
Mounting Type
Through Hole
Package / Case
TO-220-3
Transistor Polarity
P Channel
Continuous Drain Current Id
-74A
Drain Source Voltage Vds
-55V
On Resistance Rds(on)
0.02ohm
Rds(on) Test Voltage Vgs
-10V
Power Dissipation Pd
200W
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
20 mOhms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
74 A
Power Dissipation
200 W
Mounting Style
Through Hole
Gate Charge Qg
120 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
AUIRF4905
Manufacturer:
IR
Quantity:
12 500
Part Number:
AUIRF4905S
Manufacturer:
IR
Quantity:
20 000
www.irf.com
Static Electrical Characteristics @ T
V
∆V
R
V
gfs
I
I
Dynamic Electrical Characteristics @ T
Q
Q
Q
t
t
t
t
L
L
C
C
C
I
I
V
t
Q
t
Diode Characteristics
Notes:
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
on
D
S
(BR)DSS
GS(th)
SD
DS(on)
g
gs
gd
iss
oss
rss
rr
I
SD
(BR)DSS
≤
/∆T
J
≤
≤
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Parameter
≤
≤
Parameter
Ω
J
= 25°C (unless otherwise specified)
≤
J
= 25°C (unless otherwise specified)
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Min.
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
-2.0
-55
21
Typ.
Typ.
3400
1400
-0.05
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
640
–––
–––
–––
230
4.5
7.5
18
99
61
96
89
Max.
Max.
-250
-100
-260
0.02
-1.6
–––
–––
–––
100
180
–––
–––
–––
–––
–––
–––
–––
–––
–––
130
350
-4.0
-25
-74
32
86
Units
Units
V/°C
µA
nA
nC
nH
nC
ns
pF
ns
Ω
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
ID = -38A
R
R
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig.5
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = -100A/µs
D
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
= -38A
= 25°C, I
= 25°C, I
=0.72 Ω See Fig. 10
= 2.5 Ω
= 0V, I
= -10V, I
= V
= -25V, I
= -55V, V
= -44V, V
= 20V
= -20V
= -44V
= -10V , See Fig.6 and 13
= -28V
= 0V
= -25V
GS
, I
D
D
S
F
= -250µA
D
D
= -250µA
=-38A
GS
GS
=-38A , V
= -38A
= -38A
Conditions
= 0V
= 0V, T
Conditions
f
D
f
= -1mA
GS
J
= 150°C
f
= 0V
G
G
f
f
S
D
D
S
2