AUIRF4905 International Rectifier, AUIRF4905 Datasheet

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AUIRF4905

Manufacturer Part Number
AUIRF4905
Description
MOSFET P-CH 55V 74A TO220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of AUIRF4905

Input Capacitance (ciss) @ Vds
3400pF @ 25V
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
20 mOhm @ 38A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
74A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
180nC @ 10V
Power - Max
200W
Mounting Type
Through Hole
Package / Case
TO-220-3
Transistor Polarity
P Channel
Continuous Drain Current Id
-74A
Drain Source Voltage Vds
-55V
On Resistance Rds(on)
0.02ohm
Rds(on) Test Voltage Vgs
-10V
Power Dissipation Pd
200W
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
20 mOhms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
74 A
Power Dissipation
200 W
Mounting Style
Through Hole
Gate Charge Qg
120 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AUIRF4905
Manufacturer:
IR
Quantity:
12 500
Part Number:
AUIRF4905S
Manufacturer:
IR
Quantity:
20 000
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications
is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal
resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T
is 25°C, unless otherwise specified.
www.irf.com
Features
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Description
Specifically designed for Automotive applications, this cellular
design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per silicon
area. This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are
well known for, provides the designer with an extremely
efficient and reliable device for use in Automotive and a wide
variety of other applications.
HEXFET
*Qualification standards can be found at http://www.irf.com/
I
I
I
P
V
E
I
E
dv/dt
T
T
Thermal Resistance
R
R
R
D
D
DM
AR
J
STG
D
GS
AS
AR
θJC
θCS
θJA
@ T
@ T
Advanced Planar Technology
Low On-Resistance
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
@T
C
C
C
®
= 25°C
= 100°C
= 25°C
is a registered trademark of International Rectifier.
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy(Thermally limited)
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds(1.6mm from case )
Mounting Torque, 6-32 or M3 screw
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
i
Ã
Parameter
Parameter
e
GS
GS
@ -10V
@ -10V
AUTOMOTIVE GRADE
d
Gate
G
G
Typ.
0.50
–––
–––
D
S
10 lbf
D
-55 to + 175
Drain
HEXFET Power MOSFET
AUIRF4905
TO-220AB
y
D
Max.
in (1.1N
300
V
R
I
-260
200
± 20
930
1.3
-5.0
D
-74
-52
-38
20
(BR)DSS
DS(on)
G
y
m)
D
S
Max.
0.75
–––
62
max.
Source
S
0.02Ω
- 55V
-74A
Units
Units
11/10/10
W/°C
°C/W
V/ns
mJ
mJ
°C
W
A
V
A
1
A
)

Related parts for AUIRF4905

AUIRF4905 Summary of contents

Page 1

... Gate Parameter @ -10V GS @ -10V GS d à e Parameter i HEXFET Power MOSFET D V (BR)DSS R max. DS(on TO-220AB AUIRF4905 G D Drain Max. -74 -52 -260 200 1.3 ± 20 930 -38 20 -5.0 - 175 300 lbf in (1.1N m) Typ. Max. ––– 0.75 0.50 ––– ...

Page 2

Static Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward ...

Page 3

Qualification Information Qualification Level Moisture Sensitivity Level Machine Model ESD Human Body Model Charged Device Model RoHS Compliant www.irf.com † Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension of the higher ...

Page 4

VGS TOP - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V 100 Drain-to-Source Voltage (V) DS 1000 T = 25°C J 100 ...

Page 5

iss 6000 rss oss ds 5000 C iss 4000 C oss 3000 2000 C rss 1000 ...

Page 6

T , Case Temperature ( 0.50 0.20 0.1 0.10 0.05 0.02 SINGLE PULSE 0.01 (THERMAL RESPONSE) 0.01 0.00001 0.0001 www.irf.com 125 150 175 ° Notes: 1. ...

Page 7

D.U -20V 0.01 Ω Charge www.irf.com 2500 2000 DRIVER 1500 1000 15V 500 V (BR)DSS TOP ...

Page 8

Driver Gate Drive D.U.T. I Reverse Recovery Current D.U.T. V Re-Applied Voltage Inductor Curent www.irf.com + D.U.T • • ƒ • - • • • Period P.W. Waveform SD Body Diode Forward Current di/dt Waveform DS ...

Page 9

www.irf.com 9 ...

Page 10

... Ordering Information Base part Package Type AUIRF4905 TO-220 www.irf.com Standard Pack Complete Part Number Form Quantity Tube 50 AUIRF4905 10 ...

Page 11

... Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR’ ...

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