AUIRF7738L2TR1 International Rectifier, AUIRF7738L2TR1 Datasheet - Page 4

• Manufacturer Part Number: AUIRF7738L2TR1
• Description: MOSFET N-CH 40V 315A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRF7738L2TR1

• Input Capacitance (ciss) @ Vds: 7471pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.6 mOhm @ 109A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 315A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 194nC @ 10V
• Power - Max: 3.3W
• Mounting Type: *
• Package / Case: *
• Continuous Drain Current Id: 35A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 0.0012ohm
• Rds(on) Test Voltage Vgs: 10V
• Transistor Case Style: DirectFET L6
• No. Of Pins: 3
• Svhc: No SVHC
• Rohs Compliant: Yes
• Configuration: Single Hex Drain Hex Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.6 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 35 A
• Power Dissipation: 3.3 W
• Gate Charge Qg: 129 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Fig 3. Typical On-Resistance vs. Gate Voltage
4
Fig 5. Typical Transfer Characteristics
Fig 1. Typical Output Characteristics
10000
1000
1000
100
100
10
10
4
3
2
1
0
1
1
0.1
4
3
V DS = 25V
≤60µs PULSE WIDTH
≤ 60µs
Tj = 25°C
6
V GS, Gate -to -Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
4
PULSE WIDTH
8
1
10
5
4.5V
12
6
14
T J = 125°C
10
I D = 109A
T J = 25°C
TOP
BOTTOM
T J = -40°C
TJ = 25°C
TJ = 175°C
16
7
18
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
20
100
8
Fig 6. Normalized On-Resistance vs. Temperature
10000
1000
100
2.0
1.8
1.6
1.4
1.2
1.0
0.8
Fig 4. Typical On-Resistance vs. Drain Current
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
10
0.1
-60 -40 -20 0 20 40 60 80 100120140160180
5
I D = 109A
V GS = 10V
Vgs = 10V
≤ 60µs
Tj = 175°C
30
Fig 2. Typical Output Characteristics
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
55
PULSE WIDTH
I D , Drain Current (A)
1
80
T J = 25°C
4.5V
T J = 125°C
105 130 155 180 205
10
TOP
BOTTOM
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VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
100