AUIRF7737L2TR1 International Rectifier, AUIRF7737L2TR1 Datasheet - Page 9

no-image

AUIRF7737L2TR1

Manufacturer Part Number
AUIRF7737L2TR1
Description
MOSFET N-CH 40V 315A DIRECTFET
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of AUIRF7737L2TR1

Input Capacitance (ciss) @ Vds
5469pF @ 25V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.9 mOhm @ 94A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
315A
Vgs(th) (max) @ Id
4V @ 150µA
Gate Charge (qg) @ Vgs
134nC @ 10V
Power - Max
3.3W
Mounting Type
*
Package / Case
*
Continuous Drain Current Id
31A
Drain Source Voltage Vds
40V
On Resistance Rds(on)
0.0015ohm
Rds(on) Test Voltage Vgs
10V
Transistor Case Style
DirectFET L6
No. Of Pins
3
Svhc
No SVHC
Rohs Compliant
Yes
Configuration
Single Hex Drain Hex Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.9 mOhms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
31 A
Power Dissipation
3.3 W
Gate Charge Qg
89 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Please see AN-1035 for DirectFET® assembly details and stencil and substrate design recommendations
Automotive DirectFET
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
®
®
Part Marking
"AU" = GATE AND
LOGO
PART NUMBER
BATCH NUMBER
DATE CODE
Line above the last character of
AUTOMOTIVE MARKING
the date code indicates "Lead-Free"
CODE
L1
L2
M
A
B
C
D
E
G
H
K
P
R
F
J
L
9.05
6.85
5.90
0.55
0.58
1.18
0.98
0.73
0.38
1.35
2.55
3.95
5.35
0.68
0.09
0.02
MIN
METRIC
DIMENSIONS
MAX
9.15
7.10
6.00
0.65
0.62
1.22
1.02
0.77
0.42
1.45
2.65
4.05
5.45
0.74
0.17
0.08
0.356
0.270
0.232
0.022
0.023
0.046
0.039
0.029
0.015
0.053
0.100
0.155
0.210
0.027
0.003
0.001
MIN
IMPERIAL
0.360
0.280
0.236
0.026
0.024
0.048
0.040
0.030
0.017
0.057
0.104
0.159
0.214
0.029
0.007
0.003
MAX
9

Related parts for AUIRF7737L2TR1