AUIRF7737L2TR1 International Rectifier, AUIRF7737L2TR1 Datasheet - Page 6

• Manufacturer Part Number: AUIRF7737L2TR1
• Description: MOSFET N-CH 40V 315A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRF7737L2TR1

• Input Capacitance (ciss) @ Vds: 5469pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.9 mOhm @ 94A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 315A
• Vgs(th) (max) @ Id: 4V @ 150µA
• Gate Charge (qg) @ Vgs: 134nC @ 10V
• Power - Max: 3.3W
• Mounting Type: *
• Package / Case: *
• Continuous Drain Current Id: 31A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 0.0015ohm
• Rds(on) Test Voltage Vgs: 10V
• Transistor Case Style: DirectFET L6
• No. Of Pins: 3
• Svhc: No SVHC
• Rohs Compliant: Yes
• Configuration: Single Hex Drain Hex Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.9 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 31 A
• Power Dissipation: 3.3 W
• Gate Charge Qg: 89 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

10000
1000
6
100
10
1
Fig 13. Maximum Safe Operating Area
0.10
1000
Tc = 25°C
Tj = 175°C
Single Pulse
0.001
100
0.01
0.1
10
0.1
1.0E-06
10
1
1E-006
V DS , Drain-to-Source Voltage (V)
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Τ j = 25°C and
Tstart = 150°C.
OPERATION IN THIS AREA
LIMITED BY RDS(on)
1
DC
10msec
D = 0.50
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.20
0.05
0.10
0.02
0.01
1msec
0.05
0.10
0.01
100µsec
1.0E-05
1E-005
SINGLE PULSE
( THERMAL RESPONSE )
10
Duty Cycle = Single Pulse
Fig 16. Typical Avalanche Current Vs.Pulsewidth
100
t 1 , Rectangular Pulse Duration (sec)
1.0E-04
0.0001
tav (sec)
τ
J
τ
J
τ
1
Ci= τi/Ri
τ
Fig 14. Maximum Avalanche Energy vs. Temperature
1
Ci
450
400
350
300
250
200
150
100
i/Ri
R
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Tj = 150°C and
Tstart =25°C (Single Pulse)
50
1.0E-03
1
R
0
1
0.001
25
τ
2
τ
R
2
2
R
Starting T J , Junction Temperature (°C)
2
50
R
τ
3
3
R
τ
3
3
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
75
τ
R
4
τ
4
R
4
4
1.0E-02
τ
C
τ
Ri (°C/W)
0.01
100
0.00501
0.93035
0.17759
0.68769
TOP
BOTTOM 94A
125
24A
I D
13A
18.81575
0.022853
0.000126
0.00313
τi (sec)
150
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1.0E-01
0.1
175