AUIRF7737L2TR1 International Rectifier, AUIRF7737L2TR1 Datasheet - Page 6
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AUIRF7737L2TR1
Manufacturer Part Number
AUIRF7737L2TR1
Description
MOSFET N-CH 40V 315A DIRECTFET
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.AUIRF7737L2TR.pdf
(11 pages)
Specifications of AUIRF7737L2TR1
Input Capacitance (ciss) @ Vds
5469pF @ 25V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.9 mOhm @ 94A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
315A
Vgs(th) (max) @ Id
4V @ 150µA
Gate Charge (qg) @ Vgs
134nC @ 10V
Power - Max
3.3W
Mounting Type
*
Package / Case
*
Continuous Drain Current Id
31A
Drain Source Voltage Vds
40V
On Resistance Rds(on)
0.0015ohm
Rds(on) Test Voltage Vgs
10V
Transistor Case Style
DirectFET L6
No. Of Pins
3
Svhc
No SVHC
Rohs Compliant
Yes
Configuration
Single Hex Drain Hex Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.9 mOhms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
31 A
Power Dissipation
3.3 W
Gate Charge Qg
89 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
10000
1000
6
100
10
1
Fig 13. Maximum Safe Operating Area
0.10
1000
Tc = 25°C
Tj = 175°C
Single Pulse
0.001
100
0.01
0.1
10
0.1
1.0E-06
10
1
1E-006
V DS , Drain-to-Source Voltage (V)
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Τ j = 25°C and
Tstart = 150°C.
OPERATION IN THIS AREA
LIMITED BY RDS(on)
1
DC
10msec
D = 0.50
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.20
0.05
0.10
0.02
0.01
1msec
0.05
0.10
0.01
100µsec
1.0E-05
1E-005
SINGLE PULSE
( THERMAL RESPONSE )
10
Duty Cycle = Single Pulse
Fig 16. Typical Avalanche Current Vs.Pulsewidth
100
t 1 , Rectangular Pulse Duration (sec)
1.0E-04
0.0001
tav (sec)
τ
J
τ
J
τ
1
Ci= τi/Ri
τ
Fig 14. Maximum Avalanche Energy vs. Temperature
1
Ci
450
400
350
300
250
200
150
100
i/Ri
R
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Tj = 150°C and
Tstart =25°C (Single Pulse)
50
1.0E-03
1
R
0
1
0.001
25
τ
2
τ
R
2
2
R
Starting T J , Junction Temperature (°C)
2
50
R
τ
3
3
R
τ
3
3
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
75
τ
R
4
τ
4
R
4
4
1.0E-02
τ
C
τ
Ri (°C/W)
0.01
100
0.00501
0.93035
0.17759
0.68769
TOP
BOTTOM 94A
125
24A
I D
13A
18.81575
0.022853
0.000126
0.00313
τi (sec)
150
www.irf.com
1.0E-01
0.1
175