STB120N4LF6 STMicroelectronics, STB120N4LF6 Datasheet

MOSFET N-CH 40V 80A D2PAK

STB120N4LF6

Manufacturer Part Number
STB120N4LF6
Description
MOSFET N-CH 40V 80A D2PAK
Manufacturer
STMicroelectronics
Series
STripFET™ DeepGATE™r
Datasheet

Specifications of STB120N4LF6

Input Capacitance (ciss) @ Vds
4300pF @ 25V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4 mOhm @ 40A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
80nC @ 10V
Power - Max
110W
Mounting Type
*
Package / Case
*
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
4 mOhms
Drain-source Breakdown Voltage
40 V
Continuous Drain Current
80 A
Power Dissipation
110 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Gate Charge Qg
80 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-11096-2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STB120N4LF6
Manufacturer:
ST
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Part Number:
STB120N4LF6
Manufacturer:
ST
Quantity:
20 000
Features
Application
Description
This product is a 40 V N-channel STripFET™ VI
Power MOSFET based on the ST’s proprietary
STripFET™ technology, with a new gate structure.
The resulting Power MOSFET exhibits the lowest
RDS(on) in all packages.
Table 1.
February 2011
STB120N4LF6
STD120N4LF6
Order codes
Logic level drive
100% avalanche tested
Switching applications
– Automotive
STD120N4LF6
STB120N4LF6
Order codes
Device summary
V
40 V
40 V
DSS
R
DS(on)
4.0 mΩ
4.0 mΩ
STripFET™ VI DeepGATE™ Power MOSFET
max
N-channel 40 V, 3.1 mΩ , 80 A DPAK, D²PAK
120N4LF6
Marking
80 A
80 A
Doc ID 16919 Rev 2
I
D
Figure 1.
Packages
D²PAK
DPAK
DPAK
Internal schematic diagram
1
3
STB120N4LF6
STD120N4LF6
Tape and reel
D²PAK
Packaging
1
3
www.st.com
1/18
18

Related parts for STB120N4LF6

STB120N4LF6 Summary of contents

Page 1

... February 2011 N-channel 40 V, 3.1 mΩ DPAK, D²PAK STripFET™ VI DeepGATE™ Power MOSFET max I D 4.0 mΩ 4.0 mΩ Figure 1. Marking 120N4LF6 Doc ID 16919 Rev 2 STB120N4LF6 STD120N4LF6 DPAK D²PAK Internal schematic diagram Packages Packaging D²PAK Tape and reel DPAK 3 1/18 www ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 2/ Doc ID 16919 Rev 2 STB120N4LF6, STD120N4LF6 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 ...

Page 3

... STB120N4LF6, STD120N4LF6 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate-source voltage GS (1) I Drain current (continuous Drain current (continuous (2) I Drain current (pulsed Total dissipation at T TOT T Storage temperature stg T Operating junction temperature j 1. Limited by wire bonding 2. Pulse width limited by safe operating area Table 3 ...

Page 4

... V,Tc = 125 ° ± Parameter Test conditions f=1 MHz (see Figure 14) f=1 MHz open drain Doc ID 16919 Rev 2 STB120N4LF6, STD120N4LF6 Min. Typ. Max 250 µ 3 3.1 D Min Typ. Max. 4300 - 650 375 = 1.35 Unit V 1 µA 10 µA 100 nA ± ...

Page 5

... STB120N4LF6, STD120N4LF6 Table 7. Switching on/off (inductive load) Symbol t Turn-on delay time d(on) t Rise time r t Turn-off delay time d(off) t Fall time f Table 8. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge ...

Page 6

... V (V) DS Figure 5. AM08965v1 =10V 5V 300 4V 200 100 3V 1 temperature Figure 7. AM08967v1 R DS(on) (mΩ) T (°C) 125 175 J Doc ID 16919 Rev 2 STB120N4LF6, STD120N4LF6 Thermal impedance Transfer characteristics I D ( Static drain-source on resistance V =10V GS 3.5 3.0 2.5 2 AM08966v1 V (V) GS AM08968v1 ...

Page 7

... STB120N4LF6, STD120N4LF6 Figure 8. Gate charge vs gate-source voltage Figure (V) V =20V =80A Figure 10. Normalized gate threshold voltage vs temperature V GS(th) (norm 1.2 1.0 0.8 0.6 0.4 0.2 0 -75 - Figure 12. Source-drain diode forward characteristics V SD (V) 1.0 0.9 0.8 0.7 0.6 T =175°C J 0.5 0.4 ...

Page 8

... Figure 16. Unclamped inductive load test 3.3 1000 μF μ AM01470v1 Figure 18. Switching time waveform V (BR)DSS 10% 0 AM01472v1 Doc ID 16919 Rev 2 STB120N4LF6, STD120N4LF6 12V 47kΩ 100nF I =CONST G 100Ω GMAX 2200 μF 2.7kΩ 47kΩ 1kΩ circuit 2200 3.3 μ ...

Page 9

... STB120N4LF6, STD120N4LF6 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and products status are available at: www.st.com. ECOPACK trademark. Doc ID 16919 Rev 2 Package mechanical data ® ...

Page 10

... Min. Typ. 4.40 0.03 0.70 1.14 0.45 1.23 8.95 7.50 10 8.50 2.54 4.88 15 2.49 2.29 1.27 1.30 0.4 0° Doc ID 16919 Rev 2 STB120N4LF6, STD120N4LF6 Max. 4.60 0.23 0.93 1.70 0.60 1.36 9.35 10.40 5.28 15.85 2.69 2.79 1.40 1.75 8° ...

Page 11

... STB120N4LF6, STD120N4LF6 Figure 19. D²PAK (TO-263) drawing Figure 20. D²PAK footprint 12.20 a. All dimension are in millimeters (a) 16.90 3.50 9.75 Doc ID 16919 Rev 2 Package mechanical data 0079457_R 5.08 1.60 Footprint 11/18 ...

Page 12

... Min. Typ. 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 5.10 6.40 4.70 2.28 4.40 9.35 1 2.80 0.80 0.60 0.20 0° Doc ID 16919 Rev 2 STB120N4LF6, STD120N4LF6 Max. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10.10 1 8° ...

Page 13

... STB120N4LF6, STD120N4LF6 Figure 21. DPAK (TO-252) drawing Figure 22. DPAK footprint b. All dimension are in millimeters (b) 6.7 1.8 6.7 Doc ID 16919 Rev 2 Package mechanical data 0068772_G 3 1.6 2.3 2.3 1.6 AM08850v1 13/18 ...

Page 14

... W 23.7 14/18 Tape mm Dim. Max. 10.7 A 15.9 B 1.6 C 1.61 D 1.85 G 11.6 N 5.0 T 4.1 12.1 2.1 0.35 24.3 Doc ID 16919 Rev 2 STB120N4LF6, STD120N4LF6 Reel mm Min. Max. 330 1.5 12.8 13.2 20.2 24.4 26.4 100 30.4 Base qty 1000 Bulk qty 1000 ...

Page 15

... STB120N4LF6, STD120N4LF6 Table 12. DPAK (TO-252) tape and reel mechanical data Dim. Min. A0 6 1.5 D1 1.5 E 1.65 F 7.4 K0 2.55 P0 3.9 P1 7 0.25 W 15.7 Tape mm Dim. Max 10.6 B 12 1.85 N 7.6 T 2.75 4.1 8.1 2.1 0.35 16.3 Doc ID 16919 Rev 2 ...

Page 16

... P0 Top cover tape User direction of feed User direction of feed 40mm min. Access hole location B D Full radius Tape slot in core for tape start 25 mm min. width Doc ID 16919 Rev 2 STB120N4LF6, STD120N4LF6 Bending radius AM08852v2 measured at hub AM08851v2 R ...

Page 17

... STB120N4LF6, STD120N4LF6 6 Revision history Table 13. Document revision history Date 14-Dec-2009 23-Feb-2011 Revision 1 First release 2 Document status promoted from preliminary data to datasheet. Doc ID 16919 Rev 2 Revision history Changes 17/18 ...

Page 18

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 18/18 Please Read Carefully: © 2011 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com Doc ID 16919 Rev 2 STB120N4LF6, STD120N4LF6 ...

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