STF10NM50N STMicroelectronics, STF10NM50N Datasheet - Page 6

• Manufacturer Part Number: STF10NM50N
• Description: MOSFET N-CH 500V 7.0A TO220FP
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STF10NM50N

• Input Capacitance (ciss) @ Vds: 450pF @ 50V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 630 mOhm @ 3.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Power - Max: 25W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical characteristics
2.1
6/16
Figure 2.
Figure 4.
Figure 6.
0.01
0.01
0.01
0.1
0.1
0.1
(A)
(A)
(A)
10
10
10
I
I
I
D
D
D
1
1
1
0.1
0.1
0.1
Electrical characteristics (curves)
Safe operating area for TO-220
Safe operating area for DPAK
Safe operating area for TO-220FP
1
1
1
10
10
10
Tj=150°C
Tc=25°C
Single pulse
Tj=150°C
Tc=25°C
Single pulse
Tj=150°C
Tc=25°C
Single pulse
100
100
100
V
V
V
DS
DS
DS
(V)
(V)
(V)
Doc ID 16929 Rev 2
100µs
100µs
100µs
10µs
1ms
10ms
10µs
1ms
10ms
10µs
1ms
10ms
AM08149v1
AM08150v1
AM08151v1
Figure 3.
Figure 5.
Figure 7.
STD10NM50N, STF10NM50N, STP10NM50N
Thermal impedance for TO-220
Thermal impedance for DPAK
Thermal impedance for TO-220FP