STD120N4LF6 STMicroelectronics, STD120N4LF6 Datasheet

MOSFET N-CH 40V 80A DPAK

STD120N4LF6

Manufacturer Part Number
STD120N4LF6
Description
MOSFET N-CH 40V 80A DPAK
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet

Specifications of STD120N4LF6

Input Capacitance (ciss) @ Vds
4300pF @ 25V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4 mOhm @ 40A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
80nC @ 10V
Power - Max
110W
Mounting Type
*
Package / Case
*
Transistor Polarity
N Channel
Continuous Drain Current Id
80A
Drain Source Voltage Vds
40V
On Resistance Rds(on)
0.004ohm
Rds(on) Test Voltage Vgs
10V
Power Dissipation Pd
110W
Operating
RoHS Compliant
Configuration
Single
Resistance Drain-source Rds (on)
3.6 mOhms
Drain-source Breakdown Voltage
40 V
Continuous Drain Current
80 A
Power Dissipation
110 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Gate Charge Qg
80 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-11097-2

Available stocks

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Part Number
Manufacturer
Quantity
Price
Part Number:
STD120N4LF6
Manufacturer:
STM
Quantity:
4
Part Number:
STD120N4LF6
Manufacturer:
ST
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Features
Application
Description
This product is a 40 V N-channel STripFET™ VI
Power MOSFET based on the ST’s proprietary
STripFET™ technology, with a new gate structure.
The resulting Power MOSFET exhibits the lowest
RDS(on) in all packages.
Table 1.
February 2011
STB120N4LF6
STD120N4LF6
Order codes
Logic level drive
100% avalanche tested
Switching applications
– Automotive
STD120N4LF6
STB120N4LF6
Order codes
Device summary
V
40 V
40 V
DSS
R
DS(on)
4.0 mΩ
4.0 mΩ
STripFET™ VI DeepGATE™ Power MOSFET
max
N-channel 40 V, 3.1 mΩ , 80 A DPAK, D²PAK
120N4LF6
Marking
80 A
80 A
Doc ID 16919 Rev 2
I
D
Figure 1.
Packages
D²PAK
DPAK
DPAK
Internal schematic diagram
1
3
STB120N4LF6
STD120N4LF6
Tape and reel
D²PAK
Packaging
1
3
www.st.com
1/18
18

Related parts for STD120N4LF6

STD120N4LF6 Summary of contents

Page 1

... February 2011 N-channel 40 V, 3.1 mΩ DPAK, D²PAK STripFET™ VI DeepGATE™ Power MOSFET max I D 4.0 mΩ 4.0 mΩ Figure 1. Marking 120N4LF6 Doc ID 16919 Rev 2 STB120N4LF6 STD120N4LF6 DPAK D²PAK Internal schematic diagram Packages Packaging D²PAK Tape and reel DPAK 3 1/18 www.st.com ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 2/ Doc ID 16919 Rev 2 STB120N4LF6, STD120N4LF6 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 ...

Page 3

... STB120N4LF6, STD120N4LF6 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate-source voltage GS (1) I Drain current (continuous Drain current (continuous (2) I Drain current (pulsed Total dissipation at T TOT T Storage temperature stg T Operating junction temperature j 1. Limited by wire bonding 2. Pulse width limited by safe operating area Table 3 ...

Page 4

... V,Tc = 125 ° ± Parameter Test conditions f=1 MHz (see Figure 14) f=1 MHz open drain Doc ID 16919 Rev 2 STB120N4LF6, STD120N4LF6 Min. Typ. Max 250 µ 3 3.1 D Min Typ. Max. 4300 - 650 375 = 1.35 Unit V 1 µA 10 µA 100 nA ± ...

Page 5

... STB120N4LF6, STD120N4LF6 Table 7. Switching on/off (inductive load) Symbol t Turn-on delay time d(on) t Rise time r t Turn-off delay time d(off) t Fall time f Table 8. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge ...

Page 6

... V (V) DS Figure 5. AM08965v1 =10V 5V 300 4V 200 100 3V 1 temperature Figure 7. AM08967v1 R DS(on) (mΩ) T (°C) 125 175 J Doc ID 16919 Rev 2 STB120N4LF6, STD120N4LF6 Thermal impedance Transfer characteristics I D ( Static drain-source on resistance V =10V GS 3.5 3.0 2.5 2 AM08966v1 V (V) GS AM08968v1 ...

Page 7

... STB120N4LF6, STD120N4LF6 Figure 8. Gate charge vs gate-source voltage Figure (V) V =20V =80A Figure 10. Normalized gate threshold voltage vs temperature V GS(th) (norm 1.2 1.0 0.8 0.6 0.4 0.2 0 -75 - Figure 12. Source-drain diode forward characteristics V SD (V) 1.0 0.9 0.8 0.7 0.6 T =175°C J 0.5 0.4 ...

Page 8

... Figure 16. Unclamped inductive load test 3.3 1000 μF μ AM01470v1 Figure 18. Switching time waveform V (BR)DSS 10% 0 AM01472v1 Doc ID 16919 Rev 2 STB120N4LF6, STD120N4LF6 12V 47kΩ 100nF I =CONST G 100Ω GMAX 2200 μF 2.7kΩ 47kΩ 1kΩ circuit 2200 3.3 μ ...

Page 9

... STB120N4LF6, STD120N4LF6 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and products status are available at: www.st.com. ECOPACK trademark. Doc ID 16919 Rev 2 Package mechanical data ® ...

Page 10

... Min. Typ. 4.40 0.03 0.70 1.14 0.45 1.23 8.95 7.50 10 8.50 2.54 4.88 15 2.49 2.29 1.27 1.30 0.4 0° Doc ID 16919 Rev 2 STB120N4LF6, STD120N4LF6 Max. 4.60 0.23 0.93 1.70 0.60 1.36 9.35 10.40 5.28 15.85 2.69 2.79 1.40 1.75 8° ...

Page 11

... STB120N4LF6, STD120N4LF6 Figure 19. D²PAK (TO-263) drawing Figure 20. D²PAK footprint 12.20 a. All dimension are in millimeters (a) 16.90 3.50 9.75 Doc ID 16919 Rev 2 Package mechanical data 0079457_R 5.08 1.60 Footprint 11/18 ...

Page 12

... Min. Typ. 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 5.10 6.40 4.70 2.28 4.40 9.35 1 2.80 0.80 0.60 0.20 0° Doc ID 16919 Rev 2 STB120N4LF6, STD120N4LF6 Max. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10.10 1 8° ...

Page 13

... STB120N4LF6, STD120N4LF6 Figure 21. DPAK (TO-252) drawing Figure 22. DPAK footprint b. All dimension are in millimeters (b) 6.7 1.8 6.7 Doc ID 16919 Rev 2 Package mechanical data 0068772_G 3 1.6 2.3 2.3 1.6 AM08850v1 13/18 ...

Page 14

... W 23.7 14/18 Tape mm Dim. Max. 10.7 A 15.9 B 1.6 C 1.61 D 1.85 G 11.6 N 5.0 T 4.1 12.1 2.1 0.35 24.3 Doc ID 16919 Rev 2 STB120N4LF6, STD120N4LF6 Reel mm Min. Max. 330 1.5 12.8 13.2 20.2 24.4 26.4 100 30.4 Base qty 1000 Bulk qty 1000 ...

Page 15

... STB120N4LF6, STD120N4LF6 Table 12. DPAK (TO-252) tape and reel mechanical data Dim. Min. A0 6 1.5 D1 1.5 E 1.65 F 7.4 K0 2.55 P0 3.9 P1 7 0.25 W 15.7 Tape mm Dim. Max 10.6 B 12 1.85 N 7.6 T 2.75 4.1 8.1 2.1 0.35 16.3 Doc ID 16919 Rev 2 ...

Page 16

... P0 Top cover tape User direction of feed User direction of feed 40mm min. Access hole location B D Full radius Tape slot in core for tape start 25 mm min. width Doc ID 16919 Rev 2 STB120N4LF6, STD120N4LF6 Bending radius AM08852v2 measured at hub AM08851v2 R ...

Page 17

... STB120N4LF6, STD120N4LF6 6 Revision history Table 13. Document revision history Date 14-Dec-2009 23-Feb-2011 Revision 1 First release 2 Document status promoted from preliminary data to datasheet. Doc ID 16919 Rev 2 Revision history Changes 17/18 ...

Page 18

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 18/18 Please Read Carefully: © 2011 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com Doc ID 16919 Rev 2 STB120N4LF6, STD120N4LF6 ...

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