AUIRFR5305TRR International Rectifier, AUIRFR5305TRR Datasheet - Page 6

• Manufacturer Part Number: AUIRFR5305TRR
• Description: MOSFET P-CH 55V 31A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRFR5305TRR

• Input Capacitance (ciss) @ Vds: 1200pF @ 25V
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 65 mOhm @ 16A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 31A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Power - Max: 110W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

AUIRFR/U5305
6
35
30
25
20
15
10
5
0
25
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
0.01
0.1
10
0.00001
1
50
T , Case Temperature ( C)
D = 0.50
C
0.20
0.10
0.05
0.02
0.01
Case Temperature
75
100
125
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
°
150
t , Rectangular Pulse Duration (sec)
1
175
0.001
Fig 10b. Switching Time Waveforms
1. Duty factor D = t / t
2. Peak T = P
Notes:
V
10%
90%
V
GS
DS
Fig 10a. Switching Time Test Circuit
R
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
G
-10V
J
V
0.01
t
GS
d(on)
DM
V
x Z
DS
1
t
r
thJC
P
2
DM
+ T
C
t
1
D.U.T.
t
2
R
D
t
d(off)
0.1
t
f
+
-
V
www.irf.com
DD