AUIRFR5305TRR International Rectifier, AUIRFR5305TRR Datasheet - Page 4

• Manufacturer Part Number: AUIRFR5305TRR
• Description: MOSFET P-CH 55V 31A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRFR5305TRR

• Input Capacitance (ciss) @ Vds: 1200pF @ 25V
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 65 mOhm @ 16A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 31A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Power - Max: 110W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

AUIRFR/U5305
4
1000
100
100
10
10
1
1
0.1
4
TOP
BOTTOM - 4.5V
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
-V
-V
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
5
VGS
DS
GS
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
T = 25°C
J
1
6
-4.5V
7
T = 175°C
V
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 25°C
J
c
DS
10
= -25V
8
9
100
10
A
A
1000
100
10
2.0
1.5
1.0
0.5
0.0
1
0.1
Fig 2. Typical Output Characteristics
-60 -40 -20
TOP
BOTTOM - 4.5V
I
Fig 4. Normalized On-Resistance
D
= -27A
-V
T , Junction Temperature (°C)
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
J
VGS
DS
0
, Drain-to-Source Voltage (V)
Vs. Temperature
1
20
40
60
-4.5V
80 100 120 140 160 180
20µs PULSE WIDTH
T = 175°C
C
10
V
GS
= -10V
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100
A
A