AUIRFR2307ZTR International Rectifier, AUIRFR2307ZTR Datasheet - Page 5
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AUIRFR2307ZTR
Manufacturer Part Number
AUIRFR2307ZTR
Description
MOSFET N-CH 75V 53A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.AUIRFR2307ZTRL.pdf
(13 pages)
Specifications of AUIRFR2307ZTR
Input Capacitance (ciss) @ Vds
2190pF @ 25V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
16 mOhm @ 32A, 10V
Drain To Source Voltage (vdss)
75V
Current - Continuous Drain (id) @ 25° C
42A
Vgs(th) (max) @ Id
4V @ 100µA
Gate Charge (qg) @ Vgs
75nC @ 10V
Power - Max
110W
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
nce
www.irf.com
1000.00
100.00
4000
3000
2000
1000
10.00
1.00
0.10
0
Fig 5. Typical Capacitance vs.
Fig 7. Typical Source-Drain Diode
1
0.2
Drain-to-Source Voltage
T J = 175°C
V DS , Drain-to-Source Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
0.4
V SD , Source-to-Drain Voltage (V)
C rss
C oss
C iss
Forward Voltage
0.6
0.8
T J = 25°C
f = 1 MHZ
10
1.0
1.2
V GS = 0V
1.4
100
1.6
1000
100
0.1
Fig 8. Maximum Safe Operating Area
10
20
16
12
1
8
4
0
Fig 6. Typical Gate Charge vs.
1
0
Tc = 25°C
Tj = 175°C
Single Pulse
I D = 32A
Gate-to-Source Voltage
V DS , Drain-toSource Voltage (V)
Q G Total Gate Charge (nC)
20
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10msec
V DS = 60V
VDS= 38V
VDS= 15V
1msec
10
DC
40
100µsec
60
5
100
80