AUIRFR2307ZTR International Rectifier, AUIRFR2307ZTR Datasheet - Page 4

• Manufacturer Part Number: AUIRFR2307ZTR
• Description: MOSFET N-CH 75V 53A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRFR2307ZTR

• Input Capacitance (ciss) @ Vds: 2190pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 16 mOhm @ 32A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 42A
• Vgs(th) (max) @ Id: 4V @ 100µA
• Gate Charge (qg) @ Vgs: 75nC @ 10V
• Power - Max: 110W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

4
1000
1000
100
Fig 3. Typical Transfer Characteristics
0.1
100
Fig 1. Typical Output Characteristics
0.1
10
10
1
1
0.1
2
TOP
BOTTOM
T J = 175°C
V GS , Gate-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
4
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1
T J = 25°C
4.5V
Tj = 25°C
6
V DS = 20V
60µs PULSE WIDTH
60µs PULSE WIDTH
10
8
100
10
1000
100
Fig 4. Typical Forward Transconductance
Fig 2. Typical Output Characteristics
80
60
40
20
10
0
1
0.1
0
TOP
BOTTOM
10
V DS , Drain-to-Source Voltage (V)
I D ,Drain-to-Source Current (A)
vs. Drain Current
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
20
1
30
4.5V
V DS = 10V
380µs PULSE WIDTH
Tj = 175°C
60µs PULSE WIDTH
40
T J = 175°C
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T J = 25°C
10
50
60
100
70