AUIRLR2905TR International Rectifier, AUIRLR2905TR Datasheet - Page 5
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AUIRLR2905TR
Manufacturer Part Number
AUIRLR2905TR
Description
MOSFET N-CH 55V 42A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.AUIRLR2905TRL.pdf
(12 pages)
Specifications of AUIRLR2905TR
Input Capacitance (ciss) @ Vds
1700pF @ 25V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
27 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
42A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
48nC @ 5V
Power - Max
110W
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
www.irf.com
1000
100
2800
2400
2000
1600
1200
10
800
400
0.4
0
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
1
Drain-to-Source Voltage
C
C
C
V
T = 175°C
iss
rss
V
J
oss
SD
0.8
DS
, Source-to-Drain Voltage (V)
Forward Voltage
V
C
C
C
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
T = 25°C
= 0V,
= C
= C
= C
J
1.2
gs
gd
ds
+ C
+ C
10
gd
gd
f = 1MHz
1.6
, C
ds
SHORTED
2.0
V
GS
= 0V
2.4
100
A
A
1000
100
15
12
10
Fig 8. Maximum Safe Operating Area
9
6
3
0
1
0
1
I
Fig 6. Typical Gate Charge Vs.
T
T
Single Pulse
D
C
J
= 25A
= 25°C
= 175°C
10
Gate-to-Source Voltage
OPERATION IN THIS AREA LIMITED
V
Q , Total Gate Charge (nC)
DS
G
, Drain-to-Source Voltage (V)
20
V
V
DS
DS
BY R
30
= 44V
= 28V
10
DS(on)
40
FOR TEST CIRCUIT
SEE FIGURE 13
50
60
10µs
100µs
1ms
10ms
5
100
70
A
A