AUIRLR2905TR International Rectifier, AUIRLR2905TR Datasheet - Page 2
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AUIRLR2905TR
Manufacturer Part Number
AUIRLR2905TR
Description
MOSFET N-CH 55V 42A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.AUIRLR2905TRL.pdf
(12 pages)
Specifications of AUIRLR2905TR
Input Capacitance (ciss) @ Vds
1700pF @ 25V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
27 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
42A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
48nC @ 5V
Power - Max
110W
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Notes:
Static Electrical Characteristics @ T
V
∆V
R
V
gfs
I
I
Dynamic Electrical Characteristics @ T
Q
Q
Q
t
t
t
t
L
L
C
C
C
I
I
V
t
Q
t
Diode Characteristics
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
on
D
S
(BR)DSS
GS(th)
SD
DS(on)
g
gs
gd
iss
oss
rss
rr
max. junction temperature. ( See fig. 11 )
Repetitive rating; pulse width limited by
V
R
Pulse width ≤ 300µs; duty cycle ≤ 2%.
T
I
2
(BR)DSS
SD
DD
J
G
≤ 175°C
= 25Ω, I
≤ 25A, di/dt ≤ 270A/µs, V
= 25V, starting T
/∆T
J
AS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
= 25A. (See Figure 12)
Parameter
J
= 25°C, L =470µH
Parameter
Parameter
DD
≤ V
(BR)DSS
,
J
= 25°C (unless otherwise specified)
J
= 25°C (unless otherwise specified)
Intrinsic turn-on time is negligible (turn-on is dominated by L
Min. Typ. Max. Units
Min. Typ. Max. Units
Min. Typ. Max. Units
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1.0
55
21
When mounted on 1" square PCB (FR-4 or G-10
R
Material ). For recommended footprint and soldering
techniques refer to application note #AN-994.
θ
0.070
1700
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400
150
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210
7.5
4.5
is measured at Tj approximately 90°C.
11
84
26
15
80
0.027
0.030
0.040
-100
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250
100
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160
120
320
2.0
8.6
1.3
25
48
25
42
V/°C
µA
nA
nC
nH
nC
pF
ns
ns
Ω
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
I
V
V
V
I
R
V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
GS
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
J
J
G
= 25A
= 25A
= 25°C, I
= 25°C, I
= 3.4Ω
= V
= 25V, I
= 55V, V
= 44V, V
= 44V
= 25V
= 0V, I
= 10V, I
= 5.0V, I
= 4.0V, I
= 16V
= -16V
= 5.0V
= 28V
= 5.0V, R
= 0V
GS
, I
Conditions
D
Conditions
Conditions
f
D
S
F
D
D
= 250µA
D
D
GS
GS
= 250µA
= 25A
= 25A, V
= 25A
= 25A
D
= 25A
= 21A
= 1.1Ω
= 0V
= 0V, T
f
www.irf.com
D
f
f
f
G
= 1mA
GS
f
J
= 150°C
G
= 0V
S
+L
D
D
S
)
f
S
D