IRFH5215TRPBF International Rectifier, IRFH5215TRPBF Datasheet - Page 5
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IRFH5215TRPBF
Manufacturer Part Number
IRFH5215TRPBF
Description
MOSFET N-CH 150V 5.0A PQFN
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRFH5215TRPBF.pdf
(8 pages)
Specifications of IRFH5215TRPBF
Input Capacitance (ciss) @ Vds
1350pF @ 50V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
58 mOhm @ 16A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
5A
Vgs(th) (max) @ Id
5V @ 100µA
Gate Charge (qg) @ Vgs
30nC @ 10V
Power - Max
3.6W
Mounting Type
Surface Mount
Package / Case
8-VQFN Exposed Pad
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
www.irf.com
Fig 14a. Unclamped Inductive Test Circuit
Fig 12. On-Resistance vs. Gate Voltage
130
120
110
100
90
80
70
60
50
40
Fig 15a. Switching Time Test Circuit
6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
R G
20V
V DS
V GS, Gate -to -Source Voltage (V)
t p
≤ 0.1
≤ 1
I AS
D.U.T
0.01 Ω
L
T J = 25°C
T J = 125°C
15V
DRIVER
I D = 16A
+
-
+
-
V DD
A
Fig 13. Maximum Avalanche Energy vs. Drain Current
Fig 14b. Unclamped Inductive Waveforms
400
350
300
250
200
150
100
90%
V
50
10%
V
0
I
DS
AS
GS
25
Fig 15b. Switching Time Waveforms
Starting T J , Junction Temperature (°C)
t
d(on)
50
t
t p
r
75
t
100
d(off)
V
(BR)DSS
TOP
BOTTOM 16A
t
f
125
I D
2.0A
4.9A
150
5