IRFH5215TRPBF International Rectifier, IRFH5215TRPBF Datasheet - Page 3
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IRFH5215TRPBF
Manufacturer Part Number
IRFH5215TRPBF
Description
MOSFET N-CH 150V 5.0A PQFN
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRFH5215TRPBF.pdf
(8 pages)
Specifications of IRFH5215TRPBF
Input Capacitance (ciss) @ Vds
1350pF @ 50V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
58 mOhm @ 16A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
5A
Vgs(th) (max) @ Id
5V @ 100µA
Gate Charge (qg) @ Vgs
30nC @ 10V
Power - Max
3.6W
Mounting Type
Surface Mount
Package / Case
8-VQFN Exposed Pad
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
www.irf.com
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
100000
Fig 3. Typical Transfer Characteristics
10000
1000
1000
Fig 1. Typical Output Characteristics
0.01
1000
100
100
0.1
0.1
100
10
10
10
1
1
0.1
2
1
≤ 60µs PULSE WIDTH
Tj = 25°C
T J = 150°C
C oss
C rss
C iss
5.0V
V DS , Drain-to-Source Voltage (V)
4
V GS , Gate-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
1
6
10
T J = 25°C
8
10
f = 1 MHZ
V DS = 50V
≤60µs PULSE WIDTH
10
100
TOP
BOTTOM
12
100
14
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
1000
1000
16
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
Fig 4. Normalized On-Resistance vs. Temperature
1000
100
0.1
10
14.0
12.0
10.0
1
Fig 2. Typical Output Characteristics
2.5
2.0
1.5
1.0
0.5
0.0
8.0
6.0
4.0
2.0
0.0
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
0
≤ 60µs PULSE WIDTH
Tj = 150°C
I D = 16A
V GS = 10V
I D = 16A
5.0V
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
5
Q G , Total Gate Charge (nC)
1
V DS = 120V
V DS = 75V
V DS = 30V
10
10
15
TOP
BOTTOM
100
20
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
1000
25
3