AUIRFR48ZTRR International Rectifier, AUIRFR48ZTRR Datasheet - Page 7
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AUIRFR48ZTRR
Manufacturer Part Number
AUIRFR48ZTRR
Description
MOSFET N-CH 55V 42A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.AUIRFR48ZTRL.pdf
(13 pages)
Specifications of AUIRFR48ZTRR
Input Capacitance (ciss) @ Vds
1720pF @ 25V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
11 mOhm @ 37A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
42A
Vgs(th) (max) @ Id
4V @ 50µA
Gate Charge (qg) @ Vgs
60nC @ 10V
Power - Max
91W
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
11 mOhms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
62 A
Power Dissipation
91 W
Mounting Style
SMD/SMT
Gate Charge Qg
40 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
www.irf.com
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Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
I
AS
V
G
R G
20V
V
V DS
GS
Q
1K
GS
t p
t p
I AS
D.U.T
0.01
L
Q
Charge
Q
V
GD
G
DUT
(BR)DSS
L
15V
DRIVER
+
-
VCC
V DD
A
Fig 14. Threshold Voltage vs. Temperature
300
250
200
150
100
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
50
0
Fig 12c. Maximum Avalanche Energy
25
-75 -50 -25
I D = 1.0A
I D = 50µA
I D = 150µA
I D = 250µA
I D = 1.0mA
Starting T J , Junction Temperature (°C)
50
vs. Drain Current
T J , Temperature ( °C )
0
75
25
100
50
75
TOP
BOTTOM
125
100 125 150 175
150
6.3A
4.3A
37A
I D
7
175