AUIRFR48ZTRR International Rectifier, AUIRFR48ZTRR Datasheet - Page 6

• Manufacturer Part Number: AUIRFR48ZTRR
• Description: MOSFET N-CH 55V 42A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRFR48ZTRR

• Input Capacitance (ciss) @ Vds: 1720pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 11 mOhm @ 37A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 42A
• Vgs(th) (max) @ Id: 4V @ 50µA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Power - Max: 91W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 11 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 62 A
• Power Dissipation: 91 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 40 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

6
0.001
0.01
0.1
70
60
50
40
30
20
10
10
0
1
Fig 9. Maximum Drain Current vs.
1E-006
25
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
D = 0.50
0.20
0.02
0.01
0.10
0.05
50
Case Temperature
T C , Case Temperature (°C)
SINGLE PULSE
( THERMAL RESPONSE )
75
LIMITED BY PACKAGE
1E-005
100
125
150
t 1 , Rectangular Pulse Duration (sec)
0.0001
175
J
J
1
Ci= i Ri
1
Ci
2.5
2.0
1.5
1.0
0.5
Fig 10. Normalized On-Resistance
i Ri
-60 -40 -20 0
R
1
R
0.001
1
I D = 37A
V GS = 10V
2
R
2
2
R
T J , Junction Temperature (°C)
2
vs. Temperature
R
3
3
R
20 40 60 80 100 120 140 160 180
3
3
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
C
Ri (°C/W)
0.7206
0.6009
0.3175
0.01
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0.000326
0.001810
0.014886
i (sec)
0.1