STL11N3LLH6 STMicroelectronics, STL11N3LLH6 Datasheet - Page 5

• Manufacturer Part Number: STL11N3LLH6
• Description: MOSFET N-CH 30V 11A POWERFLAT
• Manufacturer: STMicroelectronics
• Series: STripFET™ DeepGATE™r

Specifications of STL11N3LLH6

• Input Capacitance (ciss) @ Vds: 1690pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7.5 mOhm @ 5.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 4.5V
• Power - Max: 2W
• Mounting Type: *
• Package / Case: *
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.006 Ohms
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 11 A
• Power Dissipation: 50 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 17 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-11099-2

STL11N3LLH6
Table 8.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Symbol
I
V
SDM
I
RRM
I
SD
Q
SD
t
rr
rr
(2)
(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Source drain diode
Parameter
Doc ID 17755 Rev 1
I
I
di/dt = 100 A/µs,
V
SD
SD
DD
Test conditions
= 11 A, V
= 11 A,
= 25 V
GS
= 0
Electrical characteristics
Min
Typ.
TBD
TBD
TBD
Max
1.1
11
44
Unit
nC
ns
A
A
V
A
5/10