AUIRFR4105TRL International Rectifier, AUIRFR4105TRL Datasheet - Page 4
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AUIRFR4105TRL
Manufacturer Part Number
AUIRFR4105TRL
Description
MOSFET N-CH 55V 20A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.AUIRFR4105TRL.pdf
(12 pages)
Specifications of AUIRFR4105TRL
Input Capacitance (ciss) @ Vds
700pF @ 25V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
45 mOhm @ 16A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
34nC @ 10V
Power - Max
68W
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
AUIRFR4105
4
1000
100
100
0.1
10
10
Fig 1. Typical Output Characteristics
1
Fig 3. Typical Transfer Characteristics
1
0.1
4
TOP
BOTTOM 4.5V
V
V
5
GS
15V
DS
VGS
10V
8.0V
7.0V
6.0V
5.5V
5.0V
T = 25°C
J
, Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
6
1
T = 175°C
J
7
4.5V
V
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 25°C
DS
C
= 25V
10
8
9
100
10
A
A
1000
100
2.4
2.0
1.6
1.2
0.8
0.4
0.0
0.1
10
1
-60 -40 -20
0.1
Fig 4. Normalized On-Resistance
Fig 2. Typical Output Characteristics
I
TOP
BOTTOM 4.5V
D
= 26A
T , Junction Temperature (°C)
V
J
DS
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
Vs. Temperature
0
, Drain-to-Source Voltage (V)
20
1
40
60
4.5V
80 100 120 140 160 180
20µs PULSE WIDTH
T = 175°C
C
10
www.irf.com
V
GS
= 10V
100
A
A