AUIRFR4105TRL International Rectifier, AUIRFR4105TRL Datasheet

AUIRFR4105TRL

Manufacturer Part Number

AUIRFR4105TRL

Description

MOSFET N-CH 55V 20A DPAK

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.AUIRFR4105TRL.pdf (12 pages)

Specifications of AUIRFR4105TRL

Input Capacitance (ciss) @ Vds

700pF @ 25V

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

45 mOhm @ 16A, 10V

Drain To Source Voltage (vdss)

55V

Current - Continuous Drain (id) @ 25° C

20A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

34nC @ 10V

Power - Max

68W

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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Description

Specifically designed for Automotive applications,

this cellular design of HEXFET® Power MOSFETs

utilizes the latest processing techniques to achieve

low on-resistance per silicon area. This benefit

combined with the fast switching speed and

ruggedized device design that HEXFET power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

in Automotive and a wide variety of other applications.

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These

are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in

the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.

Ambient temperature (T

HEXFET

*Qualification standards can be found at http://www.irf.com/

www.irf.com

Features

●

dv/dt

Thermal Resistance

STG

θJC

θJA

@ T

Advanced Planar Technology

Low On-Resistance

Dynamic dV/dT Rating

175°C Operating Temperature

Fast Switching

Fully Avalanche Rated

Repetitive Avalanche Allowed

up toTjmax

Lead-Free, RoHS Compliant

Automotive Qualified *

= 25°C Continuous Drain Current, V

= 100°C Continuous Drain Current, V

= 25°C Continuous Drain Current, V

= 25°C Power Dissipation

is a registered trademark of International Rectifier.

Pulsed Drain Current

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy (Thermally Limited)

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds (1.6mm from case )

Junction-to-Case

Junction-to-Ambient (PCB mount) **

Junction-to-Ambient

) is 25°C, unless otherwise specified.

Parameter

@ 10V (Silicon Limited)

@ 10V

@ 10V (Package Limited)

Gate

D (Silicon Limited)

D (Package Limited)

(BR)DSS

DS(on)

HEXFET

AUIRFR4105

Typ.

AUIRFR4105

–––

Drain

D-Pak

-55 to + 175

max.

Max.

0.45

300

100

± 20

6.8

5.0

Power MOSFET

Max.

110

2.2

PD - 97597

0.045mΩ

27A

Source

55V

20A

Units

W/°C

°C/W

V/ns

°C

Related parts for AUIRFR4105TRL

AUIRFR4105TRL Summary of contents

Page 1

... Soldering Temperature, for 10 seconds (1.6mm from case ) Thermal Resistance Parameter h R Junction-to-Case θJC R Junction-to-Ambient (PCB mount) ** θJA R Junction-to-Ambient θJA ® HEXFET is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ www.irf.com AUIRFR4105 HEXFET D V (BR)DSS R DS(on (Silicon Limited (Package Limited) ...

Page 2

AUIRFR4105 Static Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I Gate-to-Source ...

Page 3

Qualification Information Qualification Level Moisture Sensitivity Level Machine Model Human Body Model ESD Charged Device Model RoHS Compliant www.irf.com Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension ...

Page 4

AUIRFR4105 1000 VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 100 BOTTOM 4.5V 10 4.5V 1 20µs PULSE WIDTH T = 25°C C 0.1 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 ...

Page 5

1MHz iss rss gd 1000 iss oss ds gd 800 C oss 600 400 C ...

Page 6

AUIRFR4105 30 LIMITED BY PACKAGE 100 125 T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 1 0.20 0.10 0.05 0.02 ...

Page 7

D.U 10V 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig ...

Page 8

AUIRFR4105 D.U.T + ‚ - Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent * for Logic Level Devices GS Fig 14. For N-Channel ...

Page 9

D-Pak Part Marking Information www.irf.com AUIRFR4105 9 ...

Page 10

AUIRFR4105 TR 12.1 ( .476 ) 11.9 ( .469 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH NOTES : 1. OUTLINE ...

Page 11

... Ordering Information Base part Package Type number AUIRFR4105 Dpak www.irf.com Standard Pack Form Quantity Tube 75 Tape and Reel 2000 Tape and Reel Left 3000 Tape and Reel Right 3000 AUIRFR4105 Complete Part Number AUIRFR4105 AUIRFR4105TR AUIRFR4105TRL AUIRFR4105TRR 11 ...

Page 12

... IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and ...

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