AUIRLR2703 International Rectifier, AUIRLR2703 Datasheet - Page 8

• Manufacturer Part Number: AUIRLR2703
• Description: MOSFET N-CH 30V 20A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRLR2703

• Input Capacitance (ciss) @ Vds: 450pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 45 mOhm @ 14A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 4.5V
• Power - Max: 45W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 23A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 0.045ohm
• Rds(on) Test Voltage Vgs: 10V
• Power Dissipation Pd: 45W
• Operating: RoHS Compliant
• Configuration: Single
• Resistance Drain-source Rds (on): 45 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 23 A
• Power Dissipation: 45 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 10 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

8
Re-Applied
Voltage
Reverse
Recovery
Current

‚
+
-
D.U.T
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
P.W.
SD
DS
Waveform
Waveform
Ripple ≤ 5%
Body Diode
Fig 14. For N-Channel HEXFETS
Period
Body Diode Forward
+
-
ƒ
•
•
•
•
Diode Recovery
Current
dv/dt
Forward Drop
•
•
•
di/dt
D =
-
Period
„
P.W.
+
V
V
I
SD
GS
DD
=10V
+
-
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