AUIRLR2703 International Rectifier, AUIRLR2703 Datasheet - Page 2

• Manufacturer Part Number: AUIRLR2703
• Description: MOSFET N-CH 30V 20A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRLR2703

• Input Capacitance (ciss) @ Vds: 450pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 45 mOhm @ 14A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 4.5V
• Power - Max: 45W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 23A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 0.045ohm
• Rds(on) Test Voltage Vgs: 10V
• Power Dissipation Pd: 45W
• Operating: RoHS Compliant
• Configuration: Single
• Resistance Drain-source Rds (on): 45 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 23 A
• Power Dissipation: 45 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 10 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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‚
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Notes:
Static Electrical Characteristics @ T
V
∆V
R
V
gfs
I
I
Dynamic Electrical Characteristics @ T
Q
Q
Q
t
t
t
t
L
L
C
C
C
I
I
V
t
Q
t
Diode Characteristics
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
on
D
S
(BR)DSS
GS(th)
SD
DS(on)
iss
oss
rss
g
gs
gd
rr
Repetitive rating; pulse width limited by
V
I
Pulse width ≤ 300µs; duty cycle ≤ 2%.
2
max. junction temperature. ( See fig. 11 )
R
T
(BR)DSS
SD
DD
J
G
≤ 175°C.
≤ 14A, di/dt ≤ 140A/µs, V
= 25Ω, I
= 15V, starting T
/∆T
J
AS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
= 14A. (See Figure 12)
Parameter
J
= 25°C, L =570µH
Ù
Parameter
Parameter
DD
≤ V
(BR)DSS
,
J
= 25°C (unless otherwise specified)
J
Intrinsic turn-on time is negligible (turn-on is dominated by L
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
Min. Typ. Max. Units
Min. Typ. Max. Units
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–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.0
6.4
30
…
†
‡
Caculated continuous current based on maximum allowable
This is applied for I-PAK, L
between lead and center of die contact.
Uses IRL2703 data and test conditions.
junction temperature. Package limitation current = 20A.
0.030
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
140
450
210
110
–––
–––
–––
140
8.5
7.5
4.5
12
20
65
0.045
0.065
-100
23
–––
–––
–––
–––
250
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
210
4.6
9.3
1.3
25
15
96
97
V/°C
µA
nA
nC
nH
nC
ns
pF
ns
Ω
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
J
J
G
= 14A
= 14A
= 25°C, I
= 25°C, I
S
= 12Ω
= 0V, I
= 10V, I
= 4.5V, I
= V
= 25V, I
= 30V, V
= 24V, V
= 16V
= -16V
= 24V
= 4.5V
= 15V
= 4.5V, R
= 0V
= 25V
of D-PAK is measured
GS
, I
Conditions
Conditions
Conditions
D
fi
D
S
F
D
D
i
= 250µA
D
GS
GS
= 250µA
= 14A
= 14A
= 14A
D
= 14A, V
= 12A
= 1.1Ω
fi
= 0V
= 0V, T
www.irf.com
D
i
f
f
G
= 1mA
GS
fi
J
= 150°C
= 0V
S
G
+L
D
D
S
)
f
S
D