AUIRLR3410 International Rectifier, AUIRLR3410 Datasheet

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AUIRLR3410

Manufacturer Part Number
AUIRLR3410
Description
MOSFET N-CH 100V 17A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of AUIRLR3410

Input Capacitance (ciss) @ Vds
800pF @ 25V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
105 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
17A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
34nC @ 5V
Power - Max
79W
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
155 mOhms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
16 V
Continuous Drain Current
17 A
Power Dissipation
79 W
Mounting Style
SMD/SMT
Gate Charge Qg
22.7 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AUIRLR3410
Manufacturer:
IR
Quantity:
12 500
Part Number:
AUIRLR3410
Manufacturer:
IR
Quantity:
20 000
Part Number:
AUIRLR3410TR
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Company:
Part Number:
AUIRLR3410TR
Quantity:
10 000
Company:
Part Number:
AUIRLR3410TRL
Quantity:
4 800
Company:
Part Number:
AUIRLR3410TRL
Quantity:
4 800
HEXFET
*Qualification standards can be found at http://www.irf.com/
Features
Description
Specifically designed for Automotive applications,
this Stripe Planar design of HEXFET® Power
MOSFETs utilizes the latest processing techniques
to achieve low on-resistance per silicon area. This
benefit combined with the fast switching speed
and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the
designer with an extremely efficient and reliable
device for use in Automotive and a wide variety of
other applications.
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T
www.irf.com
I
I
I
P
V
E
I
E
dv/dt
T
T
Thermal Resistance
R
R
R
D
D
DM
AR
J
STG
D
GS
AS
AR
θJC
θJA
θJA
@ T
@ T
@T
Advanced Planar Technology
Low On-Resistance
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to
Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
C
C
C
= 25°C Continuous Drain Current, V
= 100°C Continuous Drain Current, V
®
= 25°C Power Dissipation
is a registered trademark of International Rectifier.
Pulsed Drain Current
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Junction-to-Case
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
A
) is 25°C, unless otherwise specified.
j
à g
e
Parameter
Parameter
AUTOMOTIVE GRADE
GS
GS
@ 10V
@ 10V
g
i
G
dg
Gate
S
D
G
V
R
I
D
(BR)DSS
DS(on)
HEXFET
AUIRLR3410
Typ.
–––
–––
–––
AUIRLR3410
-55 to + 175
Drain
D-Pak
max.
D
Max.
0.53
300
± 16
150
9.0
7.9
5.0
17
12
60
79
®
Power MOSFET
Max.
110
1.9
50
PD - 97491
105mΩ
Source
100V
17A
S
Units
Units
W/°C
°C/W
V/ns
mJ
mJ
°C
W
A
V
A
1

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AUIRLR3410 Summary of contents

Page 1

... Gate Parameter @ 10V GS @ 10V Parameter 97491 AUIRLR3410 ® HEXFET Power MOSFET V 100V (BR)DSS R max. 105mΩ DS(on) I 17A D D-Pak AUIRLR3410 D S Drain Source Max. Units 0.53 W/°C ± 16 150 mJ 9.0 7.9 mJ 5.0 V/ns - 175 °C 300 Typ. Max. Units ––– ...

Page 2

... AUIRLR3410 Static Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage GSS Gate-to-Source Reverse Leakage Dynamic Electrical Characteristics @ T ...

Page 3

... Charged Device Model RoHS Compliant www.irf.com Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. D-PAK Class M4 AEC-Q101-002 Class H1C AEC-Q101-001 Class C5 AEC-Q101-005 Yes AUIRLR3410 †† MSL1 3 ...

Page 4

... AUIRLR3410 100 VGS TOP 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2. 2.5V 20µs PULSE WIDTH T = 25°C J 0.1 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 T = 25° 175° 20µs PULSE WIDTH 0 Gate-to-Source Voltage (V) GS Fig 3. Typical Transfer Characteristics ...

Page 5

... A 100 0 Fig 6. Typical Gate Charge Vs. 1000 100 Single Pulse 1.2 1.4 1 Fig 8. Maximum Safe Operating Area AUIRLR3410 = 9. 80V 50V 20V DS FOR TEST CIRCUIT SEE FIGURE Total Gate Charge (nC) G Gate-to-Source Voltage OPERATION IN THIS AREA LIMITED BY R DS(on) 10µs 100µs 1ms = 25° ...

Page 6

... AUIRLR3410 100 125 T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 1 0.20 0.10 0.05 0.1 0.02 SINGLE PULSE 0.01 (THERMAL RESPONSE) 0.01 0.00001 0.0001 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 Fig 10a. Switching Time Test Circuit V DS 90% ...

Page 7

... A 100 Starting T , Junction Temperature (°C) (BR)DSS Fig 12c. Maximum Avalanche Energy Same Type as D.U.T. 12V V GS Fig 13b. Gate Charge Test Circuit AUIRLR3410 TOP 3.7A 6.4A BOTTOM 9.0A = 25V 50 75 100 125 150 J Vs. Drain Current Current Regulator 50KΩ .2µF .3µ ...

Page 8

... AUIRLR3410 D.U.T + ‚ -  Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent * for Logic Level Devices GS 8 Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations • Low Stray Inductance • Ground Plane ƒ ...

Page 9

... D-Pak Part Marking Information www.irf.com AUIRLR3410 9 ...

Page 10

... AUIRLR3410 TR 12.1 ( .476 ) 11.9 ( .469 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH NOTES : 1. OUTLINE CONFORMS TO EIA-481. 10 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) FEED DIRECTION 7.9 ( .312 ) TRR TRL 16.3 ( .641 ) 15.7 ( .619 ) ...

Page 11

... Ordering Information Base part Package Type AUIRLR3410 Dpak www.irf.com Standard Pack Form Quantity Tube 75 Tape and Reel 2000 Tape and Reel Left 3000 Tape and Reel Right 3000 AUIRLR3410 Complete Part Number AUIRLR3410 AUIRLR3410TR AUIRLR3410TRL AUIRLR3410TRR 11 ...

Page 12

... AUIRLR3410 Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR’ ...

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