AUIRF7665S2TR International Rectifier, AUIRF7665S2TR Datasheet - Page 8

• Manufacturer Part Number: AUIRF7665S2TR
• Description: MOSFET N-CH 100V 77A DIRECTFET2
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRF7665S2TR

• Input Capacitance (ciss) @ Vds: 515pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 62 mOhm @ 8.9A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 77A
• Vgs(th) (max) @ Id: 5V @ 25µA
• Gate Charge (qg) @ Vgs: 13nC @ 10V
• Power - Max: 2.4W
• Mounting Type: *
• Package / Case: *
• Configuration: Single Quad Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 62 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.1 A
• Power Dissipation: 2.4 W
• Gate Charge Qg: 8.3 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations
8
™
D
D
G
S
D
D
D = DRAIN
G = GATE
S = SOURCE
CL
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