AUIRF7665S2TR International Rectifier, AUIRF7665S2TR Datasheet - Page 4

• Manufacturer Part Number: AUIRF7665S2TR
• Description: MOSFET N-CH 100V 77A DIRECTFET2
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRF7665S2TR

• Input Capacitance (ciss) @ Vds: 515pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 62 mOhm @ 8.9A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 77A
• Vgs(th) (max) @ Id: 5V @ 25µA
• Gate Charge (qg) @ Vgs: 13nC @ 10V
• Power - Max: 2.4W
• Mounting Type: *
• Package / Case: *
• Configuration: Single Quad Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 62 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.1 A
• Power Dissipation: 2.4 W
• Gate Charge Qg: 8.3 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Fig 3. Typical On-Resistance vs. Gate Voltage
4
Fig 5. Typical Transfer Characteristics
Fig 1. Typical Output Characteristics
0.001
0.01
0.01
140
120
100
100
100
0.1
0.1
80
60
40
10
10
1
1
0.1
6
2
TOP
BOTTOM
7
V GS, Gate -to -Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
4
V GS , Gate-to-Source Voltage (V)
8
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
6
9
1
5.0V
≤ 60µs
Tj = 25°C
10
8
T J = 25°C
V DS = 25V
≤ 60µs PULSE WIDTH
PULSE WIDTH
11
10
T J = -40°C
TJ = 25°C
TJ = 175°C
T J = 125°C
12
10
12
I D = 8.9A
13
14
14
100
15
16
Fig 6. Normalized On-Resistance vs. Temperature
100
320
280
240
200
160
120
0.1
Fig 4. Typical On-Resistance vs. Drain Current
2.5
2.0
1.5
1.0
0.5
10
80
40
1
0.1
-60 -40 -20 0 20 40 60 80 100120140160180
0
TOP
BOTTOM
I D = 8.9A
V GS = 10V
Vgs = 10V
Fig 2. Typical Output Characteristics
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
10
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
I D , Drain Current (A)
1
≤ 60µs
Tj = 175°C
5.0V
T J = 125°C
20
PULSE WIDTH
T J = 25°C
10
30
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100
40