IRF9332PBF International Rectifier, IRF9332PBF Datasheet - Page 6
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IRF9332PBF
Manufacturer Part Number
IRF9332PBF
Description
MOSFET P-CH 30V 9.8A 8SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF9332TRPBF.pdf
(8 pages)
Specifications of IRF9332PBF
Input Capacitance (ciss) @ Vds
1270pF @ 25V
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
17.5 mOhm @ 9.8A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
9.8A
Vgs(th) (max) @ Id
2.4V @ 25µA
Gate Charge (qg) @ Vgs
14nC @ 10V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Transistor Polarity
P Channel
Drain Source Voltage Vds
-30V
On Resistance Rds(on)
13600µohm
Rds(on) Test Voltage Vgs
-10V
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
SOIC
Rohs Compliant
Yes
Resistance Drain-source Rds (on)
28.1 mOhms
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 9.8 A
Power Dissipation
2.5 W
Mounting Style
SMD/SMT
Gate Charge Qg
14 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF9332PBF
Manufacturer:
IR
Quantity:
20 000
Fig 18a. Unclamped Inductive Test Circuit
6
Fig 17a. Gate Charge Test Circuit
0
R
-V
-20V
G
V DS
GS
Fig 19a. Switching Time Test Circuit
t p
≤ 0.1 %
≤ 1
I AS
20K
1K
D.U.T
0.01 Ω
L
S
S
DRIVER
DUT
L
15V
+
V DD
-
A
VCC
Id
Fig 17b. Gate Charge Waveform
V
10%
90%
V
Fig 18b. Unclamped Inductive Waveforms
GS
DS
Vgs
Fig 19b. Switching Time Waveforms
I
AS
t
d(on)
Qgodr
t
r
t p
Qgd
V
t
Qgs2
(BR)DSS
d(off)
www.irf.com
Vgs(th)
Vds
Qgs1
t
f