IRF9332PBF International Rectifier, IRF9332PBF Datasheet - Page 2
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IRF9332PBF
Manufacturer Part Number
IRF9332PBF
Description
MOSFET P-CH 30V 9.8A 8SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF9332TRPBF.pdf
(8 pages)
Specifications of IRF9332PBF
Input Capacitance (ciss) @ Vds
1270pF @ 25V
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
17.5 mOhm @ 9.8A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
9.8A
Vgs(th) (max) @ Id
2.4V @ 25µA
Gate Charge (qg) @ Vgs
14nC @ 10V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Transistor Polarity
P Channel
Drain Source Voltage Vds
-30V
On Resistance Rds(on)
13600µohm
Rds(on) Test Voltage Vgs
-10V
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
SOIC
Rohs Compliant
Yes
Resistance Drain-source Rds (on)
28.1 mOhms
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 9.8 A
Power Dissipation
2.5 W
Mounting Style
SMD/SMT
Gate Charge Qg
14 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF9332PBF
Manufacturer:
IR
Quantity:
20 000
Notes:
BV
∆ΒV
R
V
∆V
I
I
gfs
Q
Q
Q
Q
R
t
t
t
t
C
C
C
E
I
I
I
V
t
Q
R
R
Static @ T
Avalanche Characteristics
Diode Characteristics
Thermal Resistance
DSS
GSS
d(on)
r
d(off)
f
AR
S
SM
rr
GS(th)
AS
SD
DS(on)
g
g
gs
gd
G
iss
oss
rss
rr
θJL
θJA
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
Pulse width ≤ 400µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board.
R
GS(th)
For DESIGN AID ONLY, not subject to production testing.
2
DSS
DSS
θ
is measured at T
/∆T
J
J
= 25°C, L = 3.3mH, R
J
= 25°C (unless otherwise specified)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
Avalanche Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Junction-to-Drain Lead
Junction-to-Ambient
Parameter
J
of approximately 90°C.
Ã
Parameter
Parameter
Parameter
G
= 25Ω, I
f
g
AS
= -7.8A.
d
Min.
Min.
-1.3
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
-30
36
0.021
Typ.
Typ.
1270
13.6
22.5
-1.9
-5.7
–––
–––
–––
–––
–––
–––
250
180
–––
–––
–––
4.1
6.6
14
27
18
15
47
73
58
36
20
Max.
Typ.
Typ.
Max.
–––
–––
–––
–––
17.5
28.1
-150
-100
–––
–––
-2.4
–––
-1.0
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
-2.5
-1.2
-80
41
54
30
mV/°C
Units
Units
V/°C
mΩ
nC
nC
nC
µA
nA
pF
ns
ns
V
V
S
Ω
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
V
V
I
V
I
R
See Figs. 19a & 19b
V
V
ƒ = 1.0KHz
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100/µs
D
D
J
J
GS
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DS
DD
G
GS
DS
= -7.8A
= -1.0A
= 25°C, I
= 25°C, I
= 6.8Ω
= V
= -24V, V
= -24V, V
= -10V, I
= -15V,V
= -15V
= -25V
= 0V, I
= -10V, I
= -4.5V, I
= -20V
= 20V
= -10V
= -15V, V
= 0V
GS
Max.
Max.
102
-7.8
, I
20
50
D
Conditions
Conditions
D
S
F
= -250µA
D
D
GS
D
= -25µA
= -2.5A, V
GS
GS
= -2.5A, V
GS
e
= -7.8A
= -9.8A
= -7.8A
= -4.5V,I
= 0V
= 0V, T
= -4.5V
www.irf.com
D
= -1mA
e
e
G
J
GS
DD
D
e
= 125°C
= -7.8A
= -24V
Units
Units
°C/W
= 0V
mJ
A
D
S
e