IRL6342PBF International Rectifier, IRL6342PBF Datasheet - Page 7

• Manufacturer Part Number: IRL6342PBF
• Description: MOSFET N-CH 30V 9.9A 8SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRL6342PBF

• Input Capacitance (ciss) @ Vds: 1025pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 14.6 mOhm @ 9.9A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 9.9A
• Vgs(th) (max) @ Id: 1.1V @ 10µA
• Gate Charge (qg) @ Vgs: 11nC @ 4.5V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 14.6 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 9.9 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 11 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SO-8 Part Marking Information
Dimensions are shown in milimeters (inches)
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