IRL6342PBF International Rectifier, IRL6342PBF Datasheet - Page 2

• Manufacturer Part Number: IRL6342PBF
• Description: MOSFET N-CH 30V 9.9A 8SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRL6342PBF

• Input Capacitance (ciss) @ Vds: 1025pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 14.6 mOhm @ 9.9A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 9.9A
• Vgs(th) (max) @ Id: 1.1V @ 10µA
• Gate Charge (qg) @ Vgs: 11nC @ 4.5V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 14.6 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 9.9 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 11 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Notes:

‚
ƒ
„
IRL6342PbF
BV
∆ΒV
R
V
∆V
I
I
gfs
Q
Q
R
t
t
t
t
C
C
C
I
I
V
t
Q
R
R
Static @ T
Diode Characteristics
Thermal Resistance
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
DS(on)
GS(th)
G
iss
oss
rss
SD
θJL
θJA
g
sw
rr
R
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
When mounted on 1 ich square copper board.
Q
Q
Q
Q
2
GS(th)
DSS
θ
gs1
gs2
gd
godr
DSS
is measured at
/∆T
J
J
= 25°C (unless otherwise specified)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Junction-to-Drain Lead
Junction-to-Ambient
T
J
Parameter
of approximately 90°C.
™
Parameter
Parameter
gs2
e
+ Q
f
gd
)
Min.
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.5
30
38
Typ.
1025
Typ.
12.0
15.0
0.01
0.60
5.79
–––
–––
-4.2
–––
–––
–––
–––
–––
–––
–––
–––
4.6
5.2
2.0
6.0
5.2
22
11
12
33
14
97
70
13
Max.
Max.
14.6
19.0
-100
Typ.
–––
–––
–––
150
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.1
1.0
2.5
1.2
7.8
79
20
mV/°C
mV/°C
Units
Units
mΩ
nC
nC
µA
nA
pF
ns
ns
V
V
S
Ω
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
V
I
V
I
R
See Figs. 18
V
V
ƒ = 1.0MHz
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100/µs
D
D
J
J
GS
GS
GS
DS
DS
DS
GS
GS
DS
GS
DS
DD
G
GS
DS
= 7.9A
= 7.9A
= 25°C, I
= 25°C, I
= 6.8Ω
= V
= 24V, V
= 24V, V
= 10V, I
= 15V
= 25V
= 0V, I
= 4.5V, I
= 2.5V, I
= 12V
= -12V
= 4.5V
= 15V, V
= 0V
GS
, I
Max.
D
20
50
D
S
F
Conditions
D
Conditions
= 250µA
D
D
GS
GS
GS
= 10µA
= 9.9A, V
= 7.9A, V
= 7.9A
d
= 9.9A
= 7.9A
= 0V
= 0V, T
= 4.5V
D
www.irf.com
d
d
= 1mA
DD
J
e
GS
G
= 125°C
= 24V
= 0V
Units
°C/W
d
D
S