BUK6E3R2-55C,127 NXP Semiconductors, BUK6E3R2-55C,127 Datasheet - Page 7

• Manufacturer Part Number: BUK6E3R2-55C,127
• Description: MOSFET N-CH TRENCH I2PACK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK6E3R2-55C,127

• Input Capacitance (ciss) @ Vds: 15300pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.2 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 258nC @ 10V
• Power - Max: 306W
• Mounting Type: *
• Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.2 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 306 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption

NXP Semiconductors
Table 6.
BUK6E3R2-55C
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
(A)
(S)
g
I
D
250
200
150
100
fs
100
50
75
50
25
0
0
function of gate-source voltage; typical values
drain current; typical values
Transfer characteristics: drain current as a
Forward transconductance as a function of
0
0
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
20
T
j
= 175 °C
2
40
…continued
60
T
j
= 25 °C
4
V
Conditions
I
see
I
V
80
All information provided in this document is subject to legal disclaimers.
S
S
GS
DS
003aae201
003aae199
= 25 A; V
= 20 A; dI
I
(V)
D
Figure 16
= 25 V
(A)
Rev. 01 — 6 September 2010
100
6
GS
S
/dt = -100 A/µs; V
= 0 V; T
Fig 6.
Fig 8.
j
= 25 °C;
R
(mΩ)
(A)
I
DSon
D
100
N-channel TrenchMOS intermediate level FET
80
60
40
20
10
8
6
4
2
0
0
function of drain-source voltage; typical values
of gate-source voltage; typical values
Output characteristics: drain current as a
Drain-source on-state resistance as a function
GS
0
0
10
= 0 V;
5
0.5
4
5
BUK6E3R2-55C
3.8
Min
-
-
-
10
1
Typ
0.85
67
176
V
1.5
15
GS
© NXP B.V. 2010. All rights reserved.
(V) = 3.6
V
V
003aae290
003aae200
GS
DS
Max
1.2
-
-
(V)
3.4
(V)
3.2
20
2
Unit
V
ns
nC
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