BUK6E2R3-40C,127 NXP Semiconductors, BUK6E2R3-40C,127 Datasheet - Page 8

• Manufacturer Part Number: BUK6E2R3-40C,127
• Description: MOSFET N-CH TRENCH I2PACK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK6E2R3-40C,127

• Input Capacitance (ciss) @ Vds: 15100pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.3 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 260nC @ 10V
• Power - Max: 306W
• Mounting Type: *
• Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.3 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 306 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption

NXP Semiconductors
BUK6E2R3-40C
Product data sheet
Fig 9.
Fig 11. Normalized drain-source on-state resistance
(A)
I
D
10
10
10
10
10
10
a
2.5
1.5
0.5
-1
-2
-3
-4
-5
-6
2
1
0
gate-source voltage
-60
factor as a function of junction temperature
Sub-threshold drain current as a function of
0
1
0
min
60
2
typ
max
120
3
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003aad806
V
003aad793
T
GS
j
(°C)
(V)
180
Rev. 1 — 18 August 2010
4
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Drain-source on-state resistance as a function
R
(mΩ)
V
GS(th)
(V)
DSon
N-channel TrenchMOS intermediate level FET
4
3
2
1
0
8
6
4
2
0
-60
junction temperature
of drain current; typical values
0
10
0
V
GS
BUK6E2R3-40C
(V) = 3.3
20
max @1mA
min @2.5mA
typ @1mA
60
30
120
3.6
© NXP B.V. 2010. All rights reserved.
3.4
40
003aae542
T
003aae283
j
I
(°C)
D
(A)
3.8
4.0
5.0
10
180
50
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