BUK663R7-75C,118 NXP Semiconductors, BUK663R7-75C,118 Datasheet - Page 8

• Manufacturer Part Number: BUK663R7-75C,118
• Description: MOSFET N-CH TRENCH D2PACK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK663R7-75C,118

• Input Capacitance (ciss) @ Vds: 15450pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 234nC @ 10V
• Power - Max: 306W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.7 mOhms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 306 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption

NXP Semiconductors
BUK663R7-75C
Product data sheet
Fig 9.
Fig 11. Normalized drain-source on-state resistance
(A)
I
D
10
10
10
10
10
10
a
2.4
1.8
1.2
0.6
-1
-2
-3
-4
-5
-6
0
−60
gate-source voltage
factor as a function of junction temperature
Sub-threshold drain current as a function of
0
0
1
min
60
2
typ
max
120
3
All information provided in this document is subject to legal disclaimers.
003aad806
V
T
GS
j
(°C)
03aa28
(V)
Rev. 2 — 15 September 2010
180
4
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Drain-source on-state resistance as a function
(mΩ)
R
V
DSon
GS(th)
(V)
15
12
4
3
2
1
0
9
6
3
0
-60
junction temperature
of drain current; typical values
0
V
GS
(V) = 3.6
50
0
3.8
BUK663R7-75C
max @1mA
min @2.5mA
typ @1mA
100
N-channel TrenchMOS FET
60
4.0
120
150
© NXP B.V. 2010. All rights reserved.
003aae542
T
003aae423
I
D
j
(°C)
(A)
4.5
5.0
6.0
10
200
180
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