BUK661R9-40C,118 NXP Semiconductors, BUK661R9-40C,118 Datasheet - Page 4

• Manufacturer Part Number: BUK661R9-40C,118
• Description: MOSFET N-CH TRENCH D2PACK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK661R9-40C,118

• Input Capacitance (ciss) @ Vds: 15100pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.9 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 260nC @ 10V
• Power - Max: 306W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.9 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 306 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption

NXP Semiconductors
BUK661R9-40C
Product data sheet
Fig 1.
Fig 3.
(A)
I
D
300
200
100
(A)
I
D
10
10
10
10
0
mounting base temperature
Continuous drain current as a function of
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
10
-1
0
4
3
2
1
10
-1
50
(1)
100
150
Limit R
All information provided in this document is subject to legal disclaimers.
T
003aac385
mb
DSon
(°C)
1
200
= V
Rev. 1 — 18 August 2010
DS
/ I
D
Fig 2.
P
(%)
der
120
N-channel TrenchMOS intermediate level FET
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
10
DC
50
BUK661R9-40C
100
V
DS
(V)
150
100 μ s
10 ms
100 ms
t
1 ms
p
© NXP B.V. 2010. All rights reserved.
=10 μ s
T
mb
003aae247
03na19
(°C)
200
10
2
4 of 15