BUK663R5-55C,118 NXP Semiconductors, BUK663R5-55C,118 Datasheet - Page 4

• Manufacturer Part Number: BUK663R5-55C,118
• Description: MOSFET N-CH TRENCH D2PACK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK663R5-55C,118

• Input Capacitance (ciss) @ Vds: 11516pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.4 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 191nC @ 10V
• Power - Max: 263W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.5 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 263 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption

NXP Semiconductors
BUK663R5-55C
Product data sheet
Fig 1.
Fig 3.
(A)
I
D
200
160
120
80
40
0
mounting base temperature
Continuous drain current as a function of
Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time
0
50
(1)
100
I
(A)
AL
10
10
10
10
150
−1
3
2
1
10
−3
All information provided in this document is subject to legal disclaimers.
T
003aac796
mb
(°C)
Rev. 2 — 23 December 2010
200
10
−2
10
−1
Fig 2.
P
(%)
der
120
N-channel TrenchMOS intermediate level FET
80
40
0
1
function of mounting base temperature
Normalized total power dissipation as a
0
t
AL
003aae402
(3)
(1)
(2)
(ms)
10
50
BUK663R5-55C
100
150
© NXP B.V. 2010. All rights reserved.
T
mb
03aa16
(°C)
200
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