PH1330AL,115 NXP Semiconductors, PH1330AL,115 Datasheet
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PH1330AL,115
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PH1330AL,115 Summary of contents
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PH1330AL N-channel 30 V 1.3 mΩ logic level MOSFET in LFPAK Rev. 01 — 14 October 2009 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 150 °C. This product is designed for computing ...
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... NXP Semiconductors 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 S source 2 S source 3 S source 4 G gate mb D mounting base; connected to drain 3. Ordering information Table 3. Ordering information Type number Package Name Description PH1330AL LFPAK2 Plastic single-ended surface-mounted package (LFPAK2); 4 leads 4 ...
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... NXP Semiconductors 250 I D (A) 200 150 100 100 Fig 1. Normalized continuous drain currnet as a function of mounting base temperature (A) Limit Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage PH1330AL_1 Product data sheet N-channel 30 V 1.3 mΩ logic level MOSFET in LFPAK ...
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... NXP Semiconductors 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter R thermal resistance from junction to th(j-mb) mounting base (j-mb) δ = 0.5 (K/ 0.2 0 single shot - Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration PH1330AL_1 Product data sheet N-channel 30 V 1.3 mΩ logic level MOSFET in LFPAK ...
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... NXP Semiconductors 6. Characteristics Table 6. Characteristics Symbol Parameter Static characteristics V drain-source (BR)DSS breakdown voltage V gate-source threshold GS(th) voltage I drain leakage current DSS I gate leakage current GSS R drain-source on-state DSon resistance R gate resistance G Dynamic characteristics Q total gate charge G(tot) Q gate-source charge GS Q pre-threshold ...
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... NXP Semiconductors Table 6. Characteristics …continued Symbol Parameter t turn-on delay time d(on) t rise time r t turn-off delay time d(off) t fall time f Source-drain diode V source-drain voltage SD t reverse recovery time rr Q recovered charge (on) DS (mΩ Fig 5. Drain-source on-state resistance as a function of gate-source voltage; typical values ...
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... NXP Semiconductors 200 g fs (S) 150 100 Fig 7. Forward transconductance as a function of drain current; typical values 100 150 ° Fig 9. Transfer characteristics: drain current as a function of gate-source voltage; typical valuesvalues PH1330AL_1 Product data sheet N-channel 30 V 1.3 mΩ logic level MOSFET in LFPAK ...
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... NXP Semiconductors - ( min - Fig 11. Sub-threshold drain current as a function of gate-source voltage GS(pl) V GS(th GS1 GS2 G(tot) Fig 13. Gate charge waveform definitions PH1330AL_1 Product data sheet N-channel 30 V 1.3 mΩ logic level MOSFET in LFPAK 003aab271 2 a 1.5 typ max 1 0.5 0 − ( Fig 12. Normalized drain-source on-state resistance ...
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... NXP Semiconductors (pF Fig 15. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values 10 R DS(on) (mΩ) 7 Fig 17. Drain-source on-state resistance as a function of drain current; typical values PH1330AL_1 Product data sheet N-channel 30 V 1.3 mΩ logic level MOSFET in LFPAK ...
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... NXP Semiconductors 7. Package outline Plastic single-ended surface-mounted package (LFPAK2); 4 leads Dimensions Unit max 1.10 0.15 0.50 4.41 mm nom 0.85 min 0.95 0.00 0.35 3.62 Note 1. Plastic or metal protrusions of 0.15 mm per side are not included. Outline version IEC SOT1023 Fig 18. Package outline SOT1023 (LFPAK2) ...
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... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date PH1330AL_1 20091014 PH1330AL_1 Product data sheet N-channel 30 V 1.3 mΩ logic level MOSFET in LFPAK Data sheet status Change notice Product data sheet - Rev. 01 — 14 October 2009 PH1330AL Supersedes - © NXP B.V. 2009. All rights reserved. ...
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... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...
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... NXP Semiconductors 11. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.1 General description . . . . . . . . . . . . . . . . . . . . . .1 1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 4 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . .4 6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 11 9 Legal information .12 9.1 Data sheet status ...