BUK652R6-40C,127 NXP Semiconductors, BUK652R6-40C,127 Datasheet - Page 2
![MOSFET N-CH TRENCH SOT78A](/photos/16/7/160729/to220ab_sml.jpg)
BUK652R6-40C,127
Manufacturer Part Number
BUK652R6-40C,127
Description
MOSFET N-CH TRENCH SOT78A
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.BUK652R6-40C127.pdf
(14 pages)
Specifications of BUK652R6-40C,127
Input Capacitance (ciss) @ Vds
11334pF @ 25V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
2.7 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
120A
Vgs(th) (max) @ Id
2.8V @ 1mA
Gate Charge (qg) @ Vgs
199nC @ 10V
Power - Max
263W
Mounting Type
Through Hole
Package / Case
TO-220-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2.6 mOhms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
120 A
Power Dissipation
263 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free by exemption / RoHS compliant by exemption
NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
BUK652R6-40C
Product data sheet
Pin
1
2
3
mb
Type number
BUK652R6-40C
Symbol Description
G
D
S
D
Pinning information
Ordering information
gate
drain
source
mounting base; connected to
drain
Table 1.
[1]
Package
Name
TO-220AB
Symbol
Avalanche ruggedness
E
Dynamic characteristics
Q
DS(AL)S
GD
Continuous current is limited by package.
Quick reference data
Parameter
non-repetitive
drain-source
avalanche energy
gate-drain charge I
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 16 December 2010
Simplified outline
SOT78A (TO-220AB)
Conditions
I
R
T
V
see
D
D
…continued
j(init)
GS
GS
= 120 A; V
= 25 A; V
Figure 14
= 10 V; see
= 50 Ω; V
= 25 °C; unclamped
1 2
mb
3
DS
sup
GS
= 32 V;
≤ 40 V;
Figure
= 10 V;
13;
Graphic symbol
BUK652R6-40C
N-channel TrenchMOS FET
mbb076
G
Min
-
-
© NXP B.V. 2010. All rights reserved.
D
S
Typ
-
56.7 -
Version
SOT78A
Max Unit
637
2 of 14
mJ
nC